Scanning tunneling microscopy studies of strain relaxation and misfit dislocations in InAs layers grown on GaAs(110) and GaAs(111)A

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 15, Issue 3, 1997, Pages 915-918

  Belk, J G ^a   Sudijono, J L ^a   Yamaguchi, H ^a   Zhang, X M ^a   Pashley, D W ^a   McConville, C F ^a,b   Jones, T S ^a   Joyce, B A ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY OF WARWICK   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0009737745     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580732     Document Type: Article

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