Fabrication of conductive single-crystal semiconductor nanoscale electromechanical structures

Applied Physics Letters

Volumn 80, Issue 23, 2002, Pages 4428-4430

  Yamaguchi, Hiroshi ^a   Hirayama, Yoshiro ^a,b  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICALLY CONDUCTIVE; GAAS; GROWTH TECHNIQUES; INAS; INAS WIRES; MECHANICAL STRUCTURES; NANO SCALE; NANOSCALE CANTILEVERS; SACRIFICIAL LAYER; SINGLE-CRYSTAL SEMICONDUCTORS;

GALLIUM ARSENIDE; INDIUM ARSENIDE; NANOTECHNOLOGY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH;

SINGLE CRYSTAL SURFACES;

EID: 79956003159     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1484252     Document Type: Article

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