Transmission electron microscopy and photoluminescence characterization of InAs quantum wires on vicinal GaAs(110) substrates by molecular beam epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 8 B, 1999, Pages 4673-4675

  Torii, Satoshi ^a   Bando, Kazuki ^a   Shim, Byoung Rho ^a   Maehashi, Kenzo ^a   Nakashima, Hisao ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

InAs quantum wires; Molecular beam epitaxy; Photoluminescence; Transmission electron microscope; Vicinal GaAs(110) surfaces

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; CRYSTAL LATTICES; MOIRE FRINGES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

CARRIER CONFINEMENT; INDIUM ARSENIDE; LATTICE MISMATCH;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0033176778     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.4673     Document Type: Article

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