First-principles calculations on atomic and electronic structures of misfit dislocations in InAs/GaAs(1 1 0) and GaAs/InAs(1 1 0) heteroepitaxies

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 256-259

  Oyama, Norihisa ^a   Ohta, Eiji ^a   Takeda, Kyozaburo ^b   Shiraishi, Kenji ^b,c   Yamaguchi, Hiroshi ^c  

^a KEIO UNIVERSITY   (Japan)

^b WASEDA UNIVERSITY   (Japan)

^c Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); ELECTRONIC STRUCTURE; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

FIRST-PRINCIPLES CALCULATIONS;

HETEROJUNCTIONS;

EID: 0032643180     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01333-5     Document Type: Article

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