Supercritical drying for nanostructure fabrication without pattern collapse

Microelectronic Engineering

Volumn 46, Issue 1, 1999, Pages 129-132

  Namatsu, Hideo ^a   Yamazaki, Kenji ^a   Kurihara, Kenji ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; DEFORMATION; DRYING; NANOSTRUCTURED MATERIALS; SEMICONDUCTING SILICON; TENSILE STRESS;

SUPERCRITICAL DRYING;

NANOTECHNOLOGY;

EID: 0033132507     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00033-7     Document Type: Article

References (3)

1. 1. H. Namatsu, K. Kurihara, M. Nagase, K. Iwadate and K. Murase, Appl. Phy. Lett., 66, 2655 (1995).
2. 2. T. Tanaka, M. Morigami and N. Atoda, J. Electrochem.Soc., 140, L115 (1993).
3. 3. H. Namatsu, M. Nagase, K. Kurihara, K. Iwadate, T.Furuta and K. Murase, J. Vac. Sci. Technol., B13, 1473 (1995).