Direct thermal conductance measurements on suspended monocrystalline nanostructures

Applied Physics Letters

Volumn 70, Issue 20, 1997, Pages 2687-2689

  Tighe, T S ^a   Worlock, J M ^a,b   Roukes, M L ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b UNIVERSITY OF UTAH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000144259     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118994     Document Type: Article

References (16)

1. dom/L≫1.
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6. In this simple discussion, we ignore phonon scattering at the transducers which complicates the results when phonon boundary specularity is large. See, e.g., T. Klitsner, J. E. Van Cleve, H. E. Fischer, and R. O. Pohl, Phys. Rev. B 38, 7576 (1988).
7. For related work regarding GaAs surface micromachining see, e.g., K. Hjort, J. Söderkvist, and J. Å. Schweitz, J. Micromech. Microeng. 4, 1 (1994); K. Fricke, Sens. Actuators A 45, 91 (1994); Y. Uenishi, H. Tanaka, and H. Ukita, IEEE Trans. Electron Devices 41, 1778 (1994).
8. For related work regarding GaAs surface micromachining see, e.g., K. Hjort, J. Söderkvist, and J. Å. Schweitz, J. Micromech. Microeng. 4, 1 (1994); K. Fricke, Sens. Actuators A 45, 91 (1994); Y. Uenishi, H. Tanaka, and H. Ukita, IEEE Trans. Electron Devices 41, 1778 (1994).
9. For related work regarding GaAs surface micromachining see, e.g., K. Hjort, J. Söderkvist, and J. Å. Schweitz, J. Micromech. Microeng. 4, 1 (1994); K. Fricke, Sens. Actuators A 45, 91 (1994); Y. Uenishi, H. Tanaka, and H. Ukita, IEEE Trans. Electron Devices 41, 1778 (1994).
10. M. Geis, S. W. Pang, N. E. Efremow, G. D. Johnson, and W. D. Goodhue, in Handbook of Ion Beam Processing Technology, edited by J. J. Cuomo, S. M. Rossnagel, and H. R. Kaufman (Noyes, New Jersey, 1989), p. 219.
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15. J. M. Ziman, Electrons and Phonons (Oxford University Press, Oxford, 1979), Chap. XI.
16. We use the geometric mean of the cross-sectional dimensions: L ∼0.300 μm.