-
1
-
-
85033305989
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-
note
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dom/L≫1.
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-
-
-
2
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-
0000186450
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-
See, e.g., C. G. Smith, H. Ahmed, and M. N. Wybourne, J. Vac. Sci. Technol. B 5, 314 (1987).
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(1987)
J. Vac. Sci. Technol. B
, vol.5
, pp. 314
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-
Smith, C.G.1
Ahmed, H.2
Wybourne, M.N.3
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3
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-
0026838180
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-
A. Potts, M. J. Kelly, D. B. Hasko, J. R. A. Cleaver, H. Ahmed, D. A. Ritchie, J. E. F. Frost, and G. A. C. Jones, Semicond. Sci. Technol. 7, B231 (1992).
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(1992)
Semicond. Sci. Technol.
, vol.7
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Potts, A.1
Kelly, M.J.2
Hasko, D.B.3
Cleaver, J.R.A.4
Ahmed, H.5
Ritchie, D.A.6
Frost, J.E.F.7
Jones, G.A.C.8
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4
-
-
0028429043
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-
K. Yoh, A. Nishida, H. Kawahara, S. Izumiya, and M. Inoue, Semicond. Sci. Technol. 9, 961 (1994).
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(1994)
Semicond. Sci. Technol.
, vol.9
, pp. 961
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Yoh, K.1
Nishida, A.2
Kawahara, H.3
Izumiya, S.4
Inoue, M.5
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6
-
-
0001431404
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-
In this simple discussion, we ignore phonon scattering at the transducers which complicates the results when phonon boundary specularity is large. See, e.g., T. Klitsner, J. E. Van Cleve, H. E. Fischer, and R. O. Pohl, Phys. Rev. B 38, 7576 (1988).
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(1988)
Phys. Rev. B
, vol.38
, pp. 7576
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-
Klitsner, T.1
Van Cleve, J.E.2
Fischer, H.E.3
Pohl, R.O.4
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7
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-
0028392976
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-
For related work regarding GaAs surface micromachining see, e.g., K. Hjort, J. Söderkvist, and J. Å. Schweitz, J. Micromech. Microeng. 4, 1 (1994); K. Fricke, Sens. Actuators A 45, 91 (1994); Y. Uenishi, H. Tanaka, and H. Ukita, IEEE Trans. Electron Devices 41, 1778 (1994).
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(1994)
J. Micromech. Microeng.
, vol.4
, pp. 1
-
-
Hjort, K.1
Söderkvist, J.2
Schweitz, J.Å.3
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8
-
-
0028543051
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-
For related work regarding GaAs surface micromachining see, e.g., K. Hjort, J. Söderkvist, and J. Å. Schweitz, J. Micromech. Microeng. 4, 1 (1994); K. Fricke, Sens. Actuators A 45, 91 (1994); Y. Uenishi, H. Tanaka, and H. Ukita, IEEE Trans. Electron Devices 41, 1778 (1994).
-
(1994)
Sens. Actuators A
, vol.45
, pp. 91
-
-
Fricke, K.1
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9
-
-
0028517565
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-
For related work regarding GaAs surface micromachining see, e.g., K. Hjort, J. Söderkvist, and J. Å. Schweitz, J. Micromech. Microeng. 4, 1 (1994); K. Fricke, Sens. Actuators A 45, 91 (1994); Y. Uenishi, H. Tanaka, and H. Ukita, IEEE Trans. Electron Devices 41, 1778 (1994).
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(1994)
IEEE Trans. Electron Devices
, vol.41
, pp. 1778
-
-
Uenishi, Y.1
Tanaka, H.2
Ukita, H.3
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10
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0442287474
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-
edited by J. J. Cuomo, S. M. Rossnagel, and H. R. Kaufman Noyes, New Jersey
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M. Geis, S. W. Pang, N. E. Efremow, G. D. Johnson, and W. D. Goodhue, in Handbook of Ion Beam Processing Technology, edited by J. J. Cuomo, S. M. Rossnagel, and H. R. Kaufman (Noyes, New Jersey, 1989), p. 219.
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(1989)
Handbook of Ion Beam Processing Technology
, pp. 219
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-
Geis, M.1
Pang, S.W.2
Efremow, N.E.3
Johnson, G.D.4
Goodhue, W.D.5
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11
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0000941682
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C. Kurdak, A. M. Chang, A. Chin, and T. Y. Chang, Phys. Rev. B 46, 6846 (1992).
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(1992)
Phys. Rev. B
, vol.46
, pp. 6846
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-
Kurdak, C.1
Chang, A.M.2
Chin, A.3
Chang, T.Y.4
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13
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0001086836
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-
B. L. Al'tshuler and A. G. Aronov, Pis'ma Zh. Eksp. Teor. Fiz. 33, 515 (1981) [JETP Lett. 33, 499 (1981)].
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(1981)
JETP Lett.
, vol.33
, pp. 499
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-
-
15
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0004190516
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Oxford University Press, Oxford, Chap. XI
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J. M. Ziman, Electrons and Phonons (Oxford University Press, Oxford, 1979), Chap. XI.
-
(1979)
Electrons and Phonons
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-
Ziman, J.M.1
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16
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85033315094
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-
note
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We use the geometric mean of the cross-sectional dimensions: L ∼0.300 μm.
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