Bright blue to orange photoluminescence emission from high-quality InGaN/GaN multiple-quantum-wells on Si(111) substrates

Applied Physics Letters

Volumn 81, Issue 9, 2002, Pages 1591-1593

  Poschenrieder, M ^a   Schulze, F ^a   Blasing J ^a   Dadgar, A ^a   Diez, A ^a   Christen, J ^a   Krost, A ^a  

^a OTTO VON GUERICKE UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION PARAMETERS; DEPOSITION TEMPERATURES; GROWTH PARAMETERS; GROWTH TIME; HIGH QUALITY; HIGH-RESOLUTION X-RAY DIFFRACTOMETRY; HRXRD; INGAN/GAN; LUMINESCENCE PEAK; ORANGE EMISSIONS; PEAK WAVELENGTH; PHOTOLUMINESCENCE EMISSION; QUANTUM WELL; SI(111) SUBSTRATE; STRUCTURAL QUALITIES; SYSTEMATIC CHANGES;

GALLIUM COMPOUNDS; GROWTH TEMPERATURE; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; WELLS; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79955981270     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1502909     Document Type: Article

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