Investigation of the optimum growth conditions of wide-bandgap quaternary InAlGaN for UV-LEDs

Materials Research Society Symposium - Proceedings

Volumn 693, Issue , 2002, Pages 201-206

  Yamabi, T ^a   Kinoshita, A ^a   Hirayama, H ^a   Ainoya, M ^a   Hirata, A ^a   Araki, T ^a   Nanishi, Y ^a   Aoyagi, Y ^a  

^a RIKEN   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; ENERGY GAP; FILM GROWTH; LIGHT EMISSION; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; PLASMA CONFINEMENT; SILICON CARBIDE; THERMAL EFFECTS; ULTRAVIOLET RADIATION;

BANDGAP; CARRIER CONFINEMENT; INDIUM ALUMINUM GALLIUM NITRIDE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0036374118     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)

1. GaN and related alloys