Piezoelectric field and its influence on the pressure behavior of the light emission from InGaN/GaN and GaN/AlGaN quantum wells

Materials Research Society Symposium - Proceedings

Volumn 693, Issue , 2002, Pages 487-499

  Suski, T ^a   Perlin, P ^a   Lepkowski, S P ^a   Teisseyre, H ^a   Gorczyca, I ^a   Prystawko, P ^a   Leszczynski, M ^a   Grandjean, N ^a   Massies, J ^a   Kitamura, T ^a   Ishida, Y ^a   Chichibu, S F ^a   Okumura, H ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELASTICITY; ELECTRIC FIELD EFFECTS; ENERGY GAP; GALLIUM NITRIDE; LIGHT EMISSION; PIEZOELECTRICITY; PRESSURE; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN; THICKNESS MEASUREMENT;

ALUMINUM GALLIUM NITRIDE; INDIUM GALLIUM NITRIDE; LINEAR ELASTICITY THEORY; PIEZOELECTRIC CONSTANT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0036375799     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (25)