Experimental verification of source-mask optimization and freeform illumination for 22-nm node static random access memory cells

Journal of Micro/Nanolithography, MEMS, and MOEMS

Volumn 10, Issue 1, 2011, Pages

  Bekaert, Joost ^a   Laenens, Bart ^a   Verhaegen, Staf ^a   Van Look, Lieve ^a   Trivkovic, Darko ^a   Lazzarino, Frederic ^a   Vandenberghe, Geert ^a   Van Adrichem, Paul ^b,c   Socha, Robert ^c   Hsu, Stephen ^c   Liu, Hua Yu ^c   Mouraille, Orion ^c   Schreel, Koen ^c   Dusa, Mircea ^c   Zimmermann, Jrg ^d   Grupner, Paul ^d   Neumann, Jens Timo ^d  

^a IMEC   (Belgium)

^b ASML US Inc   (United States)

^c ASML   (Netherlands)

^d CARL ZEISS SMT AG   (Germany)

Author keywords

freeform illumination; source mask co optimization, FlexRay; source mask optimization; static random access memory, negative tone development

Indexed keywords

CAPACITANCE; DENSITY (OPTICAL); DIFFRACTIVE OPTICAL ELEMENTS; MASKS; NANOTECHNOLOGY; OPTIMIZATION;

ARF LITHOGRAPHY; BIT CELL; CO-OPTIMIZATION; CRITICAL DIMENSION; CUSTOMIZED ILLUMINATION; EXPERIMENTAL VERIFICATION; FLEXRAY; FREEFORMS; HARD MASKS; ILLUMINATION SOURCES; INTENSITY DISTRIBUTION; METAL LAYER; ON-WAFER; PROCESS WINDOW; SOURCE MASK OPTIMIZATION; STATIC RANDOM ACCESS MEMORY; STATIC RANDOM ACCESS MEMORY, NEGATIVE TONE DEVELOPMENT;

STATIC RANDOM ACCESS STORAGE;

EID: 79955973999     PISSN: 19325150     EISSN: 19325134     Source Type: Journal    
DOI: 10.1117/1.3541778     Document Type: Conference Paper

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