Epitaxial growth of β-Si3N4 by the nitridation of Si with adsorbed N atoms for interface reaction epitaxy of double buffer AlN(0001)/β-Si3N4/Si(111)

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 5, 2011, Pages 1552-1555

  Yamabe, Nobuhiko ^a   Yamamoto, Yuka ^a   Ohachi, Tadashi ^a  

^a DOSHISHA UNIVERSITY   (Japan)

Author keywords

AlN; MBE; Polarity; Si substrate

Indexed keywords

ALN; FABRICATION PROCESS; GROUP III NITRIDES; INTERFACE REACTIONS; MBE; NITROGEN ATOM; NITROGEN IRRADIATION; POLARITY; RF PLASMA; SI (1 1 1); SI SUBSTRATES; SI SURFACES;

EPITAXIAL GROWTH; MONOLAYERS; NITRIDES; NITROGEN PLASMA; SILICON; SURFACE RECONSTRUCTION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79955606948     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000900     Document Type: Article

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