In situ measurement of adsorbed nitrogen atoms for PA-MBE growth of group III nitrides on Si

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 5, 2011, Pages 1491-1494

  Ohachi, Tadashi ^a   Yamabe, Nobuhiko ^a   Yamamoto, Yuka ^a   Wada, Motoi ^a   Ariyada, Osamu ^b  

^a DOSHISHA UNIVERSITY   (Japan)

^b Arios Inc   (Japan)

Author keywords

Atom flux measurement; MBE; Nitrogen atom adsorption; Si3N4

Indexed keywords

ALN; ATOM FLUX; ATOM PROBE; COUPLED PLASMA; GROUP III NITRIDES; HIGH QUALITY; IN-SITU; IN-SITU MEASUREMENT; MBE; MBE GROWTH; NITROGEN ATOM; NITROGEN ATOM ADSORPTION; PARALLEL ELECTRODES; RADIO FREQUENCIES; SI (1 1 1); SI3N4;

ELECTRODES; GAS ADSORPTION; IONIZATION OF GASES; NITRIDES; NITROGEN; NITROGEN PLASMA; SILICON; SILICON ALLOYS;

ATOMS;

EID: 79955593922     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201001129     Document Type: Article

References (8)

1. C. L. Wu, J. C. Wang, M. H. Chan, T. T. Chen, and S. Gwo, Appl. Phys. Lett. 83, 4530 (2003).
2. N. Yamabea, Y. Yamamotoa, and T. Ohachi, ISGN-3 abstract.
3. N. Yamabe, H. Shimomura, T. Shimamura, and T. Ohachi, J. Cryst. Growth 311, 3049 (2009).
4. M. A. Whistey, S. R. Bank, H. B. Yuen, J. S. Harris, M. M. Oye, and A. L. Holmes, Jr., J. Vac. Sci. Technol. A 23, 1 (2005).
5. T. Kikuchi, A. S. Somintac, O. Ariyada, M. Wada, and T. Ohachi, J. Cryst. Growth 292, 221 (2006).
6. T. Ohachi, N. Yamabe, H. Shimomura, T. Shimamura, O. Ariyada, and M. Wada, J. Cryst. Growth 311, 2987 (2009).
7. T. Ohachi, N. Yamabe, M. Wada, and O. Ariyada, Jpn. J. Appl. Phys., in print.
8. T. Ohachi, N. Yamabe, Y. Yamamoto, M. Wada, and O. Ariyada, Proc. ICCG-16 (J. Cryst. Growth, in print).