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Journal of Crystal Growth

Volumn 311, Issue 10, 2009, Pages 2987-2991

Measurement of nitrogen atomic flux for RF-MBE growth of GaN and AlN on Si substrates

(6) Ohachi, T a Yamabe, N a Shimomura, H a Shimamura, T a Ariyada, O b Wada, M a

a DOSHISHA UNIVERSITY (Japan)

b Arios Inc (Japan)

Author keywords

A1. Surface; A3. Epitaxy; A3. Molecular beam epitaxy; B2. Semiconduction III V materials

Indexed keywords

A1. SURFACE; A3. EPITAXY; A3. MOLECULAR BEAM EPITAXY; ALN; ATOMIC FLUXES; B2. SEMICONDUCTION III-V MATERIALS; DISCHARGE MODE; ELECTRODE AREAS; GROUP III NITRIDES; HIGH BRIGHTNESS; INDUCTIVELY COUPLED RADIO FREQUENCY DISCHARGES; MBE GROWTH; NITROGEN ATOM; NITROGEN MOLECULE; SI SUBSTRATES;

ATOMS; CRYSTAL GROWTH; ELECTRIC DISCHARGES; GALLIUM ALLOYS; GALLIUM NITRIDE; GROUP TECHNOLOGY; IONIZATION OF GASES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; MONOLAYERS; NITROGEN; PLATINUM; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WIRES;

EPITAXIAL GROWTH;

EID: 65749099991 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2009.01.069 Document Type: Article

Times cited : (16)

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