High transport Si/SiGe heterostructures for CMOS transistors with orientation and strain enhanced mobility

IEICE Transactions on Electronics

Volumn E94-C, Issue 5, 2011, Pages 712-716

  Oh, Jungwoo ^a   Huang, Jeff ^a   Ok, Injo ^a   Lee, Se Hoon ^a   Kirsch, Paul D ^a   Jammy, Raj ^a   Lee, Hi Deok ^b  

^a SEMATECH   (United States)

^b Chungnam National University   (South Korea)

Author keywords

Heterostructure; High transport; Orientation; SiGe; Strain

Indexed keywords

CMOS INTEGRATED CIRCUITS; CRYSTAL ORIENTATION; ELECTRON TRANSPORT PROPERTIES; EPITAXIAL GROWTH; GERMANIUM; HETEROJUNCTIONS; SEMICONDUCTING SILICON; SILICON; SILICON ALLOYS; STRAIN;

HIGH TRANSPORT; INTERFACE TRAP DENSITY; MOBILITY ENHANCEMENT; SI/SIGE HETEROSTRUCTURES; SIGE; SPECIFIC CONTACT RESISTIVITY; SURFACE ORIENTATION; TRANSISTOR PERFORMANCE;

HOLE MOBILITY;

EID: 79955599907     PISSN: 09168524     EISSN: 17451353     Source Type: Journal    
DOI: 10.1587/transele.E94.C.712     Document Type: Article

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