InGaN light-emitting diodes with highly transparent ZnO:Ga electrodes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7602, Issue , 2010, Pages

  Liu, H Y ^a   Li, X ^a   Ni, X ^a   Avrutin, V ^a   Izyumskaya, N ^a   Ozgur U ^a   Morkoc H ^a  

^a Virginia Commonwealth University   (United States)

Author keywords

Current crowding; GZO; InGaN; Light emitting diodes; Multiple quantum well; Transparent conductive oxide; ZnO

Indexed keywords

AS-GROWN; BULK VALUE; CONTACT LAYERS; CURRENT CROWDING; EXTERNAL QUANTUM EFFICIENCY; FILAMENTATION; HEAVILY DOPED; HIGH CURRENT DENSITIES; LATTICE DISTORTIONS; LED STRUCTURE; MULTIPLE QUANTUM WELLS; OPTIMUM TEMPERATURE; PEAK VALUES; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; RICH CONDITIONS; TRANSPARENT CONDUCTIVE OXIDES; UNDER PULSED EXCITATIONS; ZNO; ZNO LAYERS;

CONDUCTIVE FILMS; CRYSTAL GROWTH; DIODES; ELECTRODES; GALLIUM ALLOYS; GALLIUM NITRIDE; LATTICE CONSTANTS; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTOR QUANTUM WELLS; ZINC OXIDE;

LIGHT EMITTING DIODES;

EID: 77951703289     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.853327     Document Type: Conference Paper

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