Fabrication of single-electron transistors using field-emission-induced electromigration

Journal of Nanoscience and Nanotechnology

Volumn 10, Issue 11, 2010, Pages 7239-7243

  Kume, Watari ^a   Tomoda, Yusuke ^a   Hanada, Michinobu ^a   Shirakashi, Jun Ichi ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

Electromigration; Field emission current; Nanogap; Single electron transistor

Indexed keywords

ACTIVATION METHOD; CHARGING ENERGIES; COULOMB BLOCKADE PHENOMENA; DRAIN ELECTRODES; FIELD EMISSION CURRENT; FIELD EMISSION CURRENTS; FOWLER-NORDHEIM; GATE VOLTAGES; INITIAL GAP; MULTIPLE TUNNEL JUNCTIONS; NANOGAP; NANOGAP ELECTRODES; NANOGAPS; NI ATOMS; NOVEL TECHNIQUES; ROOM TEMPERATURE; SINGLE ELECTRON; TUNNEL RESISTANCE;

CAPACITANCE MEASUREMENT; COULOMB BLOCKADE; ELECTRODES; ELECTROMIGRATION; ELECTRONS; FIELD EMISSION; TRANSIENTS; TUNNEL JUNCTIONS;

SINGLE ELECTRON TRANSISTORS;

EID: 79955544596     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2010.2803     Document Type: Conference Paper

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