Single-electron transistors made by chemical patterning of silicon dioxide substrates and selective deposition of gold nanoparticles

Applied Physics Letters

Volumn 93, Issue 12, 2008, Pages

  Coskun, Ulas C ^a   Mebrahtu, Henok ^a   Huang, Paul B ^a   Huang, Jeremy ^a   Sebba, David ^a   Biasco, Adriana ^a,b,c   Makarovski, Alex ^a   Lazarides, Anne ^b   Labean, Thom H ^a,c   Finkelstein, Gleb ^a  

^a DUKE UNIVERSITY   (United States)

^b Duke University   (United States)

^c Duke University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GOLD; NONMETALS; SILICA; SILICON COMPOUNDS;

CHEMICAL PATTERNING; GOLD NANO-PARTICLES; SELECTIVE DEPOSITION; SILICON DIOXIDE SUBSTRATES; SINGLE-ELECTRON TRANSISTORS;

NANOSTRUCTURED MATERIALS;

EID: 52949131860     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2981705     Document Type: Article

References (18)

1. D. L. Klein, R. Roth, A. K. L. Lim, A. P. Alivisatos, and P. L. McEuen, Nature (London) 0028-0836 10.1038/39535 389, 699 (1997).
2. A. Bezryadin, C. Dekker, and G. Schmid, Appl. Phys. Lett. 0003-6951 10.1063/1.119871 71, 1273 (1997).
3. H. Park, A. K. L. Lim, A. P. Alivisatos, J. Park, and P. L. McEuen, Appl. Phys. Lett. 0003-6951 10.1063/1.124354 75, 301 (1999).
4. L. G. M. Olofsson, S. H. M. Persson, A. Morpurgo, C. M. Marcus, D. Golubev, L. K. Gunnarsson, and Y. M. Yao, J. Low Temp. Phys. 0022-2291 10.1023/A:1004637932760 118, 343 (2000).
5. S. I. Khondaker and Z. Yao, Appl. Phys. Lett. 0003-6951 10.1063/1.1528285 81, 4613 (2002).
6. R. Krahne, A. Yacoby, H. Shtrikman, I. Bar-Joseph, T. Dadosh, and J. Sperling, Appl. Phys. Lett. 0003-6951 10.1063/1.1495080 81, 730 (2002).
7. K. Liu, P. Avouris, J. Bucchignano, R. Martel, S. Sun, and J. Michl, Appl. Phys. Lett. 0003-6951 10.1063/1.1436275 80, 865 (2002).
8. Y. V. Kervennic, H. S. J. Van der Zant, A. F. Morpurgo, L. Gurevich, and L. P. Kouwenhoven, Appl. Phys. Lett. 0003-6951 10.1063/1.1433914 80, 321 (2002).
9. I. Amlani, A. M. Rawlett, L. A. Nagahara, and R. K. Tsui, Appl. Phys. Lett. 0003-6951 10.1063/1.1469655 80, 2761 (2002).
10. K. I. Bolotin, F. Kuemmeth, A. N. Pasupathy, and D. C. Ralph, Appl. Phys. Lett. 0003-6951 10.1063/1.1695203 84, 3154 (2004).
11. L. Bernard, M. Calame, S. J. van der Molen, J. Liao, and C. Schonenberger, Nanotechnology 18, 235202 (2007). 0957-4484
12. H. Park, J. Park, A. K. L. Lim, E. H. Anderson, A. P. Alivisatos, and P. L. McEuen, Nature (London) 0028-0836 10.1038/35024031 407, 57 (2000).
13. D. N. Weiss, X. Brokmann, L. E. Calvet, M. A. Kastner, and M. G. Bawendi, Appl. Phys. Lett. 88, 143507 (2006). 0003-6951
14. H. Y. Lin, L. C. Tsai, and C. D. Chen, Adv. Funct. Mater. 1616-301X 10.1002/adfm.200601180 17, 3182 (2007).
15. R. G. Freeman, K. C. Grabar, K. J. Allison, R. M. Bright, J. A. Davis, A. P. Guthrie, M. B. Hommer, M. A. Jackson, P. C. Smith, D. G. Walter, and M. J. Natan, Science 0036-8075 10.1126/science.267.5204.1629 267, 1629 (1995).
16. A. N. Shipway, E. Katz, and I. Willner, ChemPhysChem 1439-4235 10.1002/1439-7641(20000804)1:1<18::AID-CPHC18>3.0.CO;2-L 1, 18 (2000).
17. W. Kern, Handbook of Semiconductor Cleaning Technology (Noyes, Park Ridge, NJ, 1993).
18. K. Sarveswaran, W. C. Hu, P. W. Huber, G. H. Bernstein, and M. Lieberman, Langmuir 0743-7463 10.1021/la0615948 22, 11279 (2006).