298 K operation of Nb/Nb oxide-based single-electron transistors with reduced size of tunnel junctions by thermal oxidation

Journal of Applied Physics

Volumn 83, Issue 10, 1998, Pages 5567-5569

  Shirakashi, Jun Ichi ^a   Matsumoto, Kazuhiko ^a   Miura, Naruhisa ^b   Konagai, Makoto ^b  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000437187     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367392     Document Type: Article

References (12)

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