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Volumn 50, Issue 4 PART 2, 2011, Pages

In situ observation of polycrystalline silicon thin films grown using aluminum-doped zinc oxide on glass substrate by the aluminum-induced crystallization

(7) Jung, Mina a Okada, Atsushi b Saito, Takanobu b Suemasu, Takashi b Chung, Chan Yeup a Kawazoe, Yoshiyuki a Usami, Noritaka a

a TOHOKU UNIVERSITY (Japan)

b UNIVERSITY OF TSUKUBA (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AL-DOPED ZNO; ALUMINUM-DOPED ZINC OXIDE; ALUMINUM-INDUCED CRYSTALLIZATION; ANNEALING TEMPERATURES; CONTROLLING INTERFACES; GLASS SUBSTRATES; IN-SITU OBSERVATIONS; POLY-SI FILMS; POLY-SI THIN FILM; POLYCRYSTALLINE SILICON (POLY-SI); POLYCRYSTALLINE SILICON THIN FILM; SI CONCENTRATION;

ALUMINUM; CRYSTALLIZATION; OXIDE FILMS; POLYSILICON; SUBSTRATES; THIN FILMS; ZINC OXIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79955460165 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.50.04DP02 Document Type: Article

Times cited : (6)

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