AlGaN/GaN high-electron mobility transistors with low thermal resistance grown on single-crystal diamond (111) substrates by metalorganic vapor-phase epitaxy

Applied Physics Letters

Volumn 98, Issue 16, 2011, Pages

  Hirama, Kazuyuki ^a   Taniyasu, Yoshitaka ^a   Kasu, Makoto ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; ALGAN/GAN HEMTS; ALGAN/GAN HETEROSTRUCTURES; CUT-OFF; DIAMOND STRUCTURES; DIAMOND SUBSTRATES; EPITAXIALLY GROWN; GATE-LENGTH; HIGH THERMAL CONDUCTIVITY; MAXIMUM DRAIN CURRENT; MAXIMUM FREQUENCY OF OSCILLATIONS; METAL-ORGANIC VAPOR PHASE EPITAXY; SHEET CARRIER DENSITIES; SINGLE CRYSTAL DIAMOND; THERMAL RESISTANCE; WURTZITE STRUCTURE;

CRYSTAL STRUCTURE; DIAMONDS; DRAIN CURRENT; ELECTRON GAS; ELECTRON MOBILITY; EPITAXIAL GROWTH; GALLIUM NITRIDE; HETEROJUNCTIONS; SINGLE ELECTRON TRANSISTORS; THERMAL CONDUCTIVITY; TWO DIMENSIONAL ELECTRON GAS; VAPORS; ZINC SULFIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79955408450     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3574531     Document Type: Article

References (17)

1. M. Asif Khan, A. Bhattarai, J. N. Kuznia, and D. T. Olson, Appl. Phys. Lett. 0003-6951 63, 1214 (1993). 10.1063/1.109775
2. Y. -F. Wu, D. Kapolnek, J. P. Ibbetson, P. Parikh, B. P. Keller, and U. K. Mishra, Appl. Phys. Lett. 0003-6951 69, 1438 (1996). 10.1063/1.117607
3. Y. -F. Wu, D. Kapolnek, J. P. Ibbetson, P. Parikh, B. P. Keller, and U. K. Mishra, IEEE Trans. Electron Devices 0018-9383 48, 2181 (2001). 10.1109/16.944215 (Pubitemid 32922904)
4. V. Tilak, B. Green, V. Kaper, H. Kim, T. Prunty, J. Smart, J. Shealy, and L. Eastman, IEEE Electron Device Lett. 0741-3106 22, 504 (2001). 10.1109/55.962644 (Pubitemid 33106083)
5. Y. -F. Wu, A. Saxler, M. Moore, R. P. Smith, S. Sheppard, P. M. Chavarkar, T. Wisleder, U. K. Mishra, and P. Parikh, IEEE Electron Device Lett. 0741-3106 25, 117 (2004). 10.1109/LED.2003.822667
6. L. S. Pan and D. R. Kania, Diamond: Electronic Properties and Applications (Springer, London, 1995).
7. M. Imura, K. Nakajima, M. Liao, Y. Koide, and H. Amano, J. Cryst. Growth 0022-0248 312, 368 (2010). 10.1016/j.jcrysgro.2009.11.017
8. K. Hirama, Y. Taniyasu, and M. Kasu, Jpn. J. Appl. Phys. 0021-4922 49, 04DH01 (2010). 10.1143/JJAP.49.04DH01
9. Y. Taniyasu and M. Kasu, J. Cryst. Growth 0022-0248 311, 2825 (2009). 10.1016/j.jcrysgro.2009.01.021
10. K. Hirama, Y. Taniyasu, and M. Kasu, J. Appl. Phys. 0021-8979 108, 013528 (2010). 10.1063/1.3452362
11. K. Hirama, Y. Taniyasu, and M. Kasu, Appl. Phys. Lett. 0003-6951 98, 011908 (2011). 10.1063/1.3533380
12. M. Alomari, A. Dussaigne, D. Martin, N. Grandjean, C. Gaquiere, and E. Kohn, Electron. Lett. 0013-5194 46, 299 (2010). 10.1049/el.2010.9054
13. A. Dussaigne, D. Martin, N. Grandjean, C. Gaquiere, and E. Kohn, Jpn. J. Appl. Phys. 0021-4922 49, 061001 (2010). 10.1143/JJAP.49.061001
14. R. Dimitrov, M. Murphy, J. Smart, W. Schaff, J. R. Shealy, L. F. Eastman, O. Ambacher, and M. Stutzmann, J. Appl. Phys. 0021-8979 87, 3375 (2000). 10.1063/1.372353
15. D. Meeks, Microwave J. 0026-2897 35, 165 (1992).
16. W. Liu and A. A. Balandin, J. Appl. Phys. 0021-8979 97, 073710 (2005). 10.1063/1.1868876 (Pubitemid 40537957)
17. A. J. Amaro and K. R. S. Murthy, 12th International Symposium on Advanced Packaging Materials: Processes, Properties, and Interfaces (IEEE, New York, 2007), p. 58.