Hexagonal AlN(0001) heteroepitaxial growth on cubic diamond (001)

Japanese Journal of Applied Physics

Volumn 49, Issue 4 PART 2, 2010, Pages

  Hirama, Kazuyuki ^a   Taniyasu, Yoshitaka ^a   Kasu, Makoto ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ALN LAYERS; ATOMIC BONDING; ATOMIC LAYER; CUBIC DIAMOND; DIAMOND(001); GROWTH MECHANISMS; GROWTH STAGES; HETEROEPITAXIAL GROWTH; HEXAGONAL ALUMINUM NITRIDES; METAL-ORGANIC VAPOR PHASE EPITAXY; THERMAL CLEANING;

DIAMONDS; EPITAXIAL GROWTH; NITRIDES; SOIL CONSERVATION; SUBSTRATES; SURFACE CLEANING;

ALUMINUM NITRIDE;

EID: 77952725671     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.04DH01     Document Type: Article

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