Investigation of the In composition in InGaN/GaN quantum wells deposited by MOVPE and/or MBE with emission from violet to green

Physica Status Solidi (B) Basic Research

Volumn 248, Issue 5, 2011, Pages 1187-1190

  Mutta, G R ^a   Ruterana, P ^a   Doualan, J L ^a   Chauvat, M P ^a   Ivaldi, F ^b   Kret, S ^b   Kaufmann, N A K ^c   Dussaigne, A ^c   Martin, D ^c   Grandjean, N ^c  

^a Ecole Nationale Supérieure des Ingénieurs de Caen   (France)

^b INSTITUTE OF PHYSICS   (Poland)

^c EPFL   (Switzerland)

Author keywords

GaN; Indium composition; InGaN; MBE; MOVPE; PL; Quantum wells; Strain; TEM; Thickness fluctuation

Indexed keywords

EID: 79955373840     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.201000801     Document Type: Article

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