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Volumn 29, Issue 3, 2011, Pages

Improving the thermal stability of nickel monosilicide thin films by combining annealing with the use of an interlayer and a capping layer

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; CAPPING LAYER; FORMATION TEMPERATURE; LAYER-INVERSION; MORPHOLOGICAL STABILITY; NI-SILICIDE; NICKEL MONOSILICIDE; NICKEL SILICIDE; PREANNEALING; THERMAL STABILITY;

EID: 79955143086     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3565468     Document Type: Article
Times cited : (6)

References (23)
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  • 6
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  • 9
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    • 1567-1739, 10.1016/j.ca2009.04.011
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  • 13
    • 34247571929 scopus 로고    scopus 로고
    • Effects of capping layers on the electrical characteristics of nickel silicided junctions
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  • 18
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    • Improvement of junction leakage of nickel silicided junction by a Ti-capping layer
    • DOI 10.1109/55.798047
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    • D'Heurle, F.M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.