Effects of capping layers on the electrical characteristics of nickel silicided junctions

Microelectronic Engineering

Volumn 84, Issue 5-8, 2007, Pages 1801-1805

  Wu, Chi Chang ^a,c   Wu, Wen Fa ^a   Su, P Y ^b   Chen, L J ^b   Ko, Fu Hsiang ^c  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Capping layer; Junction diode; Nickel silicide

Indexed keywords

ELECTRIC PROPERTIES; LEAKAGE CURRENTS; NICKEL COMPOUNDS; SILICIDES; THERMODYNAMIC STABILITY; THIN FILMS;

CAPPING LAYERS; JUNCTION DIODES; LEAKAGE CURRENT DENSITIES; NICKEL SILICIDE;

SEMICONDUCTOR JUNCTIONS;

EID: 34247571929     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.01.198     Document Type: Article

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