Thermal stability, phase and interface uniformity of Ni-silicide formed by Ni-Si solid-state reaction

Thin Solid Films

Volumn 462-463, Issue SPEC. ISS., 2004, Pages 146-150

  Qu, Xin Ping ^a   Jiang, Yu Long ^a   Ru, Guo Ping ^a   Lu, Fang ^a   Li, Bing Zong ^a   Detavernier, C ^b   Van Meirhaeghe, R L ^b  

^a FUDAN UNIVERSITY   (China)

^b GHENT UNIVERSITY   (Belgium)

Author keywords

Deep level defects; Nickel silicide; Schottky barrier; Solid state reaction; Thermal stability

Indexed keywords

DEEP LEVEL DEFECTS; NICKEL SILICIDE; SCHOTTKY BARRIER; SOLID STATE REACTION;

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; NUCLEATION; PHASE INTERFACES; THERMODYNAMIC STABILITY; X RAY DIFFRACTION ANALYSIS;

NICKEL COMPOUNDS;

EID: 4344675333     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.05.091     Document Type: Article

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