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Volumn 322, Issue 1, 2011, Pages 27-32

Embedded voids formation by overgrowth on gaN nanowires for high-quality gaN films

(5) Frajtag, P a Samberg, J P a El Masry, N A a Nepal, N a Bedair, S M a

a North Carolina State University (United States)

Author keywords

A1. Etching; A1. Line defects; A1. Nanostructures; A1. Volume defects; A3. Metalorganic chemical vapor deposition; B1. Nitrides

Indexed keywords

A1. ETCHING; A1. LINE DEFECTS; A1. NANOSTRUCTURES; A1. VOLUME DEFECTS; A3.METALORGANIC CHEMICAL VAPOR DEPOSITION; B1. NITRIDES;

ATOMIC FORCE MICROSCOPY; CRYSTALLOGRAPHY; DEFECTS; EPITAXIAL FILMS; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; NANOWIRES; NITRIDES; PLASMA ETCHING; SUBSTRATES; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

DRY ETCHING;

EID: 79954626150 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2011.02.032 Document Type: Article

Times cited : (21)

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