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Journal of Crystal Growth

Volumn 322, Issue 1, 2011, Pages 10-14

Growth rate enhancement of InAs nanowire by molecular beam epitaxy

(2) Bubesh Babu, J a Yoh, Kanji a

a HOKKAIDO UNIVERSITY (Japan)

Author keywords

A3. Molecular beam epitaxy; A3. Nanowire growth; B1. Nanomaterials; B2. Semiconductor IIIV materials

Indexed keywords

A3. MOLECULAR BEAM EPITAXY; B1. NANOMATERIALS; B2. SEMICONDUCTOR IIIV MATERIALS; DIFFUSION KINETICS; DIFFUSION LENGTH; GROWTH CONDITIONS; INAS; KEY FACTORS; MOLECULAR BEAM EPITAXIAL; NANOWIRE GROWTH; RATE ENHANCEMENT; SYSTEMATIC ANALYSIS;

DIFFUSION; EPITAXIAL GROWTH; GROWTH RATE; INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOSTRUCTURED MATERIALS; NANOWIRES; SEMICONDUCTING INDIUM;

GROWTH KINETICS;

EID: 79954580886 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2011.02.041 Document Type: Article

Times cited : (9)

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