Vertical high mobility wrap-gated InAs nanowire transistor

Device Research Conference - Conference Digest, DRC

Volumn 2005, Issue , 2005, Pages 157-158

  Bryllert, Tomas ^a,b   Samuelson, Lars ^a,c   Jensen, Linus E ^a   Wernersson, Lars Erik ^a,c  

^a LUND UNIVERSITY   (Sweden)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^c QuMat Technologies AB   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BEAM EPITAXY; ELECTRIC CURRENTS; ELECTRON MOBILITY; EPITAXIAL GROWTH; HETEROJUNCTIONS; NANOSTRUCTURED MATERIALS; QUANTUM THEORY; TRANSCONDUCTANCE;

EPITAXY TECHNIQUE; SUB-THRESHOLD CHARACTERISTICS; WRAP-GATED;

FIELD EFFECT TRANSISTORS;

EID: 33646243041     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2005.1553100     Document Type: Conference Paper

References (4)

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4. R V. V. V. J. Rao, T. C. Chong, L. S. Tan, W. S. Lau, and J. J. Liou, Microwave Opt Technol Lett. 27 (2000), 61-66