Impact of a γ-Al2 O3 (001) barrier on LaAlO3 metal-oxide- semiconductor capacitor electrical properties

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 1, 2009, Pages 384-388

  Becerra, L ^a   Merckling, C ^a   El Kazzi, M ^a   Baboux, N ^b   Vilquin, B ^a   Saint Girons, G ^a   Plossu, C ^b   Hollinger, G ^a  

^a ECOLE CENTRALE DE LYON   (France)

^b UNIVERSITÉ DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; AMORPHOUS SILICON; CAPACITORS; CHARGE COUPLED DEVICES; INTERFACE STATES; LANTHANUM COMPOUNDS; METALS; MOLECULAR BEAM EPITAXY; MOS CAPACITORS; OXIDE SEMICONDUCTORS; PERMITTIVITY; SILICA; SILICATES; X RAY PHOTOELECTRON SPECTROSCOPY;

AFTER HIGH TEMPERATURE; DIELECTRIC CONSTANT VALUES; ELECTRICAL MEASUREMENT; EQUIVALENT OXIDE THICKNESS; FLAT-BAND VOLTAGE SHIFT; INTERFACE STATE DENSITY; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; POST DEPOSITION ANNEALING;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 59949086805     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3065437     Document Type: Article

References (12)

1. The international Technology Roadmap for Semiconductors, ITRS, 2007, http://www.itrs.net.
2. L. Becerra, C. Merckling, N. Baboux, C. Plossu, O. Marty, M. El-Kazzi, G. Saint-Girons, B. Vilquin, and G. Hollinger, Appl. Phys. Lett. 0003-6951 10.1063/1.2811956 91, 192909 (2007).
3. X. B. Lu, Appl. Phys. Lett. 0003-6951 10.1063/1.1690880 84, 2620 (2004).
4. C. Merckling, M. El-Kazzi, G. Dalhaye, M. Gendry, G. Saint-Girons, G. Hollinger, L. Largeau, and G. Patriarche, Appl. Phys. Lett. 0003-6951 10.1063/1.2403902 89, 232907 (2006).
5. C. Merckling, M. El-Kazzi, L. Becerra, L. Largeau, G. Patriarche, G. Saint-Girons, and G. Hollinger, Microelectron. Eng. 84, 2243 (2007).
6. C. Busseret, N. Baboux, C. Plossu, and A. Poncet, Proceedings of SISPAD, 2006 (unpublished), p. 188.
7. P. Palestri, IEEE Trans. Electron Devices 0018-9383 10.1109/TED.2006. 887226 54, 106 (2007).
8. K. J. Yang and C. Hu, IEEE Trans. Electron Devices 0018-9383 10.1109/16.772500 46, 1500 (1999).
9. J. Robertson, Rep. Prog. Phys. 0034-4885 10.1088/0034-4885/69/2/R02 69, 327 (2006).
10. L. Yan, H. B. Lu, G. T. Tan, F. Chen, Y. L. Zhou, G. Z. Yang, W. Liu, and Z. H. Chen, Appl. Phys. A: Mater. Sci. Process. 0947-8396 10.1007/s00339-002- 2069-1 77, 721 (2003).
11. R. Castagń and A. Vapaille, Surf. Sci. 0039-6028 10.1016/0039-6028(71)90092-6 28, 157 (1971).
12. D. O. Klenov, D. G. Schlom, H. Li, and S. Stemmer, Jpn. J. Appl. Phys., Part 2 0021-4922 10.1143/JJAP.44.L617 44, L617 (2005).