Quasi-damascene metal gate/high-k CMOS using oxygenation through gate electrodes

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1737-1739

  Choi, Changhwan ^a   Ando, Takashi ^a   Cartier, Eduard ^a   Frank, Martin M ^a   Iijima, Ryosuke ^b   Narayanan, Vijay ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b Toshiba America Inc   (United States)

Author keywords

High k gate dielectric; Oxygenation; Replacement gate process

Indexed keywords

CAPACITANCE-EQUIVALENT THICKNESS; CHANNEL INVERSION; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; EQUIVALENT OXIDE THICKNESS; GATE ELECTRODES; HIGH-K GATE DIELECTRIC; IN-DIFFUSION; INTEGRATION SCHEME; LOW THRESHOLD VOLTAGE; METAL GATE; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; N-CHANNEL; NMOSFET; PMOSFET; REPLACEMENT GATE PROCESS;

DIELECTRIC DEVICES; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); METALS; MOS DEVICES; OXYGEN; OXYGENATION; OXYGENATORS; TITANIUM; TITANIUM NITRIDE; TITANIUM OXIDES;

MOSFET DEVICES;

EID: 67349169040     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.057     Document Type: Article

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