Impact of flash annealing on performance and reliability of high-κ/metal-gate MOSFETs for sub-45nm CMOS

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 353-356

  Kalra, Pankaj ^a,b   Majhi, Prashant ^c   Heh, Dawei ^a   Bersuker, Gennadi ^a   Young, Chadwin ^a   Vora, Nikhil ^d   Harris, Rusty ^e   Kirsch, Paul ^a   Choi, Rino ^f   Chang, Man ^g   Lee, Joonmyoung ^g   Hwang, Hyunsang ^g   Tseng, Hsing Huang ^a   Jammy, Rajarao ^h   Liu, Tsu Jae King ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c INTEL CORPORATION   (United States)

^d UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^e Inha University ^*

^f Inha University   (South Korea)

^g Gwangju Institute of Science and Technology (GIST)   (South Korea)

^h IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM; METAL ANALYSIS; METALS; MOSFET DEVICES; RAPID THERMAL ANNEALING; SILICON COMPOUNDS;

ANNEAL PROCESS; CMOS TECHNOLOGIES; DEFECT GENERATION; FLASH ANNEALING; GATE DIELECTRIC RELIABILITY; METAL GATES; METAL-GATE ELECTRODES; MILLISECOND ANNEALING; MOSFET PERFORMANCE; MOSFETS; ULTRA-SHALLOW JUNCTIONS;

ANNEALING;

EID: 50249111563     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4418944     Document Type: Conference Paper

References (13)

1. International Technology Roadmap for Semiconductors, 2006 Update.
2. T. Ito et al., Symposium on VLSl Technology, pp. 53-54, 2003.
3. K. Adachi et al., Symposium on VLSl Technology, pp. 142-143, 2005.
4. A. Shima et al., Symposium on VLSl Technology, pp.144-145, 2005.
5. A. Pouydebasque et al., IEEE IEDM Tech. Digest, pp. 679-682 , 2005.
6. S. Severi et al., IEEE IEDM Tech. Digest, pp. 859-862 ,2006.
7. D. C. Gilmer et al., Proc. European Conference Solid-State Device Research, pp. 351-354, 2006.
8. W. Lerch et al., Mater. Sci. Engg., vols. 124-125, pp. 24-31, 2005.
9. V. N. Faifer et al., Extended Abstracts of the Fifth International Workshop on Junction Technology, pp. 45-48, 2005.
10. P. D. Kirsch et al., IEEE IEDM Tech. Digest, pp. 629-632, 2006.
11. J. R. Hauser, IEEE Trans. Electron Devices, vol. 43, pp.1981-1988,1996.
12. D. Heh et al., IEEE Trans. Electron Devices, vol. 54, pp. 1338-1345, 2007.
13. G. Bersuker et al., Journal of Applied Physics, vol. 100, pp. 094108, 2006.