Photoreflectance characterization of ultrashallow junction activation in millisecond annealing

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 28, Issue 1, 2010, Pages

  Chism, Will ^a,b,c   Current, Michael ^b,c   Vartanian, Victor ^c  

^a Xitronix Corporation   (United States)

^b 1729 Comstock Way   (United States)

^c SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

B IMPLANTATION; DOPANT ACTIVATION; DOPANT CONCENTRATIONS; DOPED SAMPLE; HIGHLY SENSITIVE; MILLISECOND ANNEALING; NEAR-SURFACE; PHOTOREFLECTANCE; PRECISE MEASUREMENTS; ULTRA SHALLOW JUNCTION;

CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRIC FIELDS; ELECTRIC RESISTANCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS;

RAPID THERMAL ANNEALING;

EID: 77949384052     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3253327     Document Type: Conference Paper

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