MEMS-compatible high-density trench capacitor with ultra-conformal Cu/SiO2 layers by supercritical fluid deposition

Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

Volumn , Issue , 2011, Pages 1309-1312

  Momose, T ^a,b   Yamada, H ^b   Kitamura, Y ^c   Hattori, Y ^c   Shimogaki, Y ^b,d   Sugiyama, M ^b,d  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b BEANS Project   (Japan)

^c DENSO CORPORATION   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONFORMAL DEPOSITION; DEPOSITION METHODS; DIELECTRIC CONSTANTS; HIGH-DENSITY; INNER SURFACES; LOW-LEAKAGE CURRENT; MEMS CHIPS; METAL-INSULATOR-METAL STRUCTURES; MONOLITHIC INTEGRATION; OXIDE SURFACE; POWER GENERATORS; POWER STORAGE; PROCESS TECHNOLOGIES; PROJECTED AREA; SUPER-CAPACITOR; SUPERCRITICAL FLUID DEPOSITION; TRENCH CAPACITORS; VOID-FREE; WAFER LEVEL;

ASPECT RATIO; CAPACITORS; COPPER; EFFLUENT TREATMENT; ELECTRIC FIELDS; MECHANICAL ENGINEERING; MECHANICS; METAL INSULATOR BOUNDARIES; MONOLITHIC INTEGRATED CIRCUITS; REACTIVE ION ETCHING; SEMICONDUCTING SILICON COMPOUNDS; SENSOR NETWORKS; SENSOR NODES; SILICON WAFERS; SUPERCRITICAL FLUIDS; TELECOMMUNICATION EQUIPMENT; THREE DIMENSIONAL;

MEMS;

EID: 79953802689     PISSN: 10846999     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MEMSYS.2011.5734674     Document Type: Conference Paper

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