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Volumn 104, Issue 6, 2008, Pages

Submicron three-dimensional trenched electrodes and capacitors for DRAMs and FRAMs: Fabrication and electrical testing

Author keywords

[No Author keywords available]

Indexed keywords


EID: 54749141629     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2981197     Document Type: Article
Times cited : (28)

References (32)
  • 4
    • 54749108243 scopus 로고    scopus 로고
    • International Technology Roadmafor Semiconductors (ITRS).
    • International Technology Roadmap for Semiconductors (ITRS), 2003.
    • (2003)
  • 9
    • 0002962667 scopus 로고
    • 1058-4587 10.1080/10584589508012262.
    • M. Huffman, Integr. Ferroelectr. 1058-4587 10.1080/10584589508012262 10, 39 (1995).
    • (1995) Integr. Ferroelectr. , vol.10 , pp. 39
    • Huffman, M.1
  • 21
    • 51349146669 scopus 로고    scopus 로고
    • Proceedings of the 16th IEEE International Symposium on Applications of Ferroelectrics, (unpublished), Vol.,.
    • M. Miyake, J. F. Scott, X. -J. Lou, F. D. Morrison, T. Tatsuta, and O. Tsuji, Proceedings of the 16th IEEE International Symposium on Applications of Ferroelectrics, 2007 (unpublished), Vol. 1, p. 38.
    • (2007) , vol.1 , pp. 38
    • Miyake, M.1    Scott, J.F.2    Lou, X.-J.3    Morrison, F.D.4    Tatsuta, T.5    Tsuji, O.6
  • 29
  • 30


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.