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Volumn 221, Issue 1-4, 2000, Pages 368-372

Structural and optical properties of InGaN/GaN multiple quantum wells: The effect of the number of InGaN/GaN pairs

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

EID: 0034510684     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00715-6     Document Type: Article
Times cited : (34)

References (12)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.