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Volumn 221, Issue 1-4, 2000, Pages 368-372
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Structural and optical properties of InGaN/GaN multiple quantum wells: The effect of the number of InGaN/GaN pairs
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Author keywords
[No Author keywords available]
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Indexed keywords
DISLOCATIONS (CRYSTALS);
METALLORGANIC VAPOR PHASE EPITAXY;
PHOTOLUMINESCENCE;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR GROWTH;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY DIFFRACTION ANALYSIS;
GALLIUM NITRIDE;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 0034510684
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(00)00715-6 Document Type: Article |
Times cited : (34)
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References (12)
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