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Volumn 43, Issue 5, 2011, Pages 918-922

Effect of repetition nanoindentation of GaN epilayers on a-axis sapphire substrates

Author keywords

atomic force microscopy; gallium nitride; metal organic chemical vapor deposition; nanoindentation

Indexed keywords

A-PLANE GAN; ATOMIC FORCE MICROSCOPES; BASAL SLIP; CRITICAL DEPTH; GAN EPILAYERS; GAN FILM; INCIPIENT SLIPS; LOAD DISPLACEMENTS; MAPPING ANALYSIS; METAL ORGANIC CHEMICAL VAPOR DEPOSITION; MOBILE DISLOCATIONS; MORPHOLOGICAL STUDY; RESIDUAL DEFORMATION; SAPPHIRE SUBSTRATES;

EID: 79953681616     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.3658     Document Type: Article
Times cited : (5)

References (33)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.