'Pop-in' phenomenon during nanoindentation in epitaxial GaN thin films on c-plane sapphire substrates

Materials Chemistry and Physics

Volumn 99, Issue 2-3, 2006, Pages 410-413

  Navamathavan, R ^a   Moon, Yong Tae ^a   Kim, Gwang Seok ^b   Lee, Tae Geol ^b   Hahn, Jun Hee ^b   Park, Seong Ju ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

Author keywords

GaN film; Nanoindentation; Pop in

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; SAPPHIRE; SUBSTRATES;

GAN FILMS; NANOINDENTATION; POP-IN; THREADING DISLOCATION;

THIN FILMS;

EID: 33747873429     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2005.11.021     Document Type: Article

References (16)

1. Nakamura S., Mukai T., and Senoh M. Appl. Phys. Lett. 64 (1994) 1687
2. Nakamura S., Senoh M., Nagahama S., Iwasa N., Yamada T., Matsushita T., Kiyoku H., and Sugimoto Y. Appl. Phys. Lett. 68 (1996) 2105
3. Drory M.D., Ager J.W., Suski T., Grzegory I., and Porowski S. Appl. Phys. Lett. 69 (1996) 4044
4. Zaldivar M.H., Fernandez P., and Piqueras J. Semicond. Sci. Technol. 13 (1998) 900
5. Yu G., Ishikawa H., Egawa T., Soga T., Watanabe J., Jimbo T., and Umeno M. J. Cryst. Growth 189-190 (1998) 701
6. Nowak R., Pessa M., Suganuma M., Leszczynski M., Grzegory I., Porowski S., and Yoshida F. Appl. Phys. Lett. 75 (1999) 2070
7. Kucheyev S.O., Bradby J.E., Williams J.S., Jegadish C., Swain S.V., and Li G. Appl. Phys. Lett. 78 (2001) 156
8. Kucheyev S.O., Bradby J.E., Williams J.S., Jegadish C., Toth M., Phillips M.R., and Swain M.V. Appl. Phys. Lett. 77 (2000) 3373
9. Bradby J.E., Kucheyev S.O., Williams J.S., Leung J.W., Swain M.V., Munroe P., Li G., and Phillips M.R. Appl. Phys. Lett. 80 (2002) 383
10. Caceres D., Vergara I., Gonzalez R., Monroy E., Calle F., Munoz E., and Omnes F. J. Appl. Phys. 86 (1999) 6773
11. Kim D.J., Moon Y.T., Ahn K.S., and Park S.J. J. Vac. Sci. Technol. B 18 (2000) 140
12. Suresh S., Nieh T.G., and Choi B.W. Scripta Mater. 41 (1999) 951
13. R. Navamathavan, K.K. Kim, D.K. Hwang, S.J. Park, T.G. Lee, G.S. Kim, J.H. Hahn, submitted for publication.
14. Ning X.J., Chien F.R., Pirouz P., Yang J.W., and Asif Khan M. J. Mater. Res. 11 (1996) 580
15. Sverdlov B.N., Martin G.A., Morkoc H., and Smith D.J. Appl. Phys. Lett. 67 (1995) 2063
16. Lee C.D., Sagar A., Feenstra R.M., Inoki C.K., Kuan T.S., Sarney W.L., and Riba L.S. Appl. Phys. Lett. 79 (2001) 3428