Formation of straight 10 nm diameter silicon nanopores in gold decorated silicon

ACS Nano

Volumn 3, Issue 10, 2009, Pages 3122-3126

  Büttner, Claudia C ^a,d   Langner, Andreas ^a,b   Geuss, Markus ^a,c   Müller, Frank ^a   Werner, Peter ^a   Gösele, Ulrich ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b PAUL SCHERRER INSTITUTE   (Switzerland)

^c UNIVERSITY OF FRIBOURG   (Switzerland)

^d GERMAN AEROSPACE CENTER DLR   (Germany)

Author keywords

Gold; HF; Nanopores; Silicon

Indexed keywords

CATHODIC MATERIALS; CYLINDRICAL SURFACE; GOLD NANOCLUSTER; GOLD PARTICLES; HF; HF SOLUTIONS; MESO-PORES; PORE FORMATION; SILICON NANOWIRES; SILICON SURFACES; STAIN ETCHING; TENTATIVE MODELS;

CRYSTAL GROWTH; DISSOLUTION; DISSOLVED OXYGEN; DISSOLVED OXYGEN SENSORS; ELECTRIC WIRE; ETCHING; GOLD; HYDROFLUORIC ACID; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOWIRES; SEMICONDUCTING SILICON COMPOUNDS; SURFACES;

NANOPORES;

EID: 70350660829     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn900817d     Document Type: Article

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