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Volumn 600, Issue 16, 2006, Pages 3147-3153

Quantitative analysis of thermally induced desorption during halogen-etching of a silicon (1 1 1) surface

Author keywords

Etching energy; Silicon; Spectroscopy; Thermal desorption

Indexed keywords

ACTIVATION ENERGY; ADSORPTION; CHLORINE; DESORPTION; ETCHING; HALOGENATION; SPECTROSCOPIC ANALYSIS; SURFACE REACTIONS; THERMOANALYSIS;

EID: 33748085366     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2006.05.052     Document Type: Article
Times cited : (4)

References (30)
  • 1
    • 0035931894 scopus 로고    scopus 로고
    • For example, a fragmentation reaction was found on an organic/inorganic surface with TDS:
    • For example, a fragmentation reaction was found on an organic/inorganic surface with TDS:. Zahidi El.M., O-Hassani H., and McBreen P.H. Nature 409 (2001) 1023
    • (2001) Nature , vol.409 , pp. 1023
    • Zahidi, El.M.1    O-Hassani, H.2    McBreen, P.H.3
  • 28
    • 0001247472 scopus 로고
    • and references therein
    • Seel M., and Bagus P.S. Phys. Rev. B 28 (1983) 2023 and references therein
    • (1983) Phys. Rev. B , vol.28 , pp. 2023
    • Seel, M.1    Bagus, P.S.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.