메뉴 건너뛰기




Volumn 47, Issue 5, 2011, Pages 636-641

Effect of surface texture and backside patterned reflector on the AlGaInP light-emitting diode: High extraction of waveguided light

Author keywords

AlGaInP; light emitting diode; waveguided light

Indexed keywords

ALGAINP; ALGAINP LEDS; EXTERNAL QUANTUM EFFICIENCY; EXTRACTION OF WAVEGUIDED LIGHT; HIGH BRIGHTNESS; LED CHIPS; NOVEL STRUCTURES; RANDOMLY DISTRIBUTED; SAPPHIRE SUBSTRATES; SURFACE TEXTURES; WAVEGUIDED LIGHT;

EID: 79953174946     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2011.2107891     Document Type: Article
Times cited : (25)

References (28)
  • 1
    • 36449009381 scopus 로고
    • High-efficiency In- GaAlP/GaAs visible light-emitting diodes
    • Mar.
    • H. Sugawara, M. Ishikawa, and G. Hatakoshi, "High-efficiency In- GaAlP/GaAs visible light-emitting diodes," Appl. Phys. Lett., vol. 58, no. 10, pp. 1010-1012, Mar. 1991.
    • (1991) Appl. Phys. Lett. , vol.58 , Issue.10 , pp. 1010-1012
    • Sugawara, H.1    Ishikawa, M.2    Hatakoshi, G.3
  • 3
    • 0032184367 scopus 로고    scopus 로고
    • Electrical derivative characteristics of ion-implanted AlGaInP/GaInP multi-quantum well lasers
    • PII S0038110198001488
    • J.-K. Sheu, Y.-K. Su, S.-J. Chang, G.-C. Chi, F.-B. Lin, C.-C. Liu, and C.-C. Chiu, "Electrical derivative characteristics of ion-implanted AlGaInP/GaInP multi-quantum well lasers," Solid State Electron., vol. 42, no. 10, pp. 1867-1869, Oct. 1998. (Pubitemid 128403618)
    • (1998) Solid-State Electronics , vol.42 , Issue.10 , pp. 1867-1869
    • Sheu, J.-K.1    Su, Y.-K.2    Chang, S.-J.3    Chi, G.-C.4    Lin, K.-B.5    Liu, C.-C.6    Chiu, C.-C.7
  • 4
    • 0032346634 scopus 로고    scopus 로고
    • Reactive ion etching for AlGalnP/GaInP laser structures
    • Jul.
    • Y. Z. Juang, Y. K. Su, S. J. Chang, D. F. Huang, and C. S. Chang, "Reactive ion etching for AlGalnP/GaInP laser structures," J. Vac. Sci. Technol. A, vol. 16, no. 4, pp. 2031-2036, Jul. 1998.
    • (1998) J. Vac. Sci. Technol. A , vol.16 , Issue.4 , pp. 2031-2036
    • Juang, Y.Z.1    Su, Y.K.2    Chang, S.J.3    Huang, D.F.4    Chang, C.S.5
  • 5
    • 0026931301 scopus 로고
    • High-brightness InGaAlP green light-emitting diodes
    • DOI 10.1063/1.108423
    • H. Sugawara, K. Itaya, H. Nozaki, and G. Hatakoshi, "High-brightness InGaAlP green light-emitting diodes," Appl. Phys. Lett., vol. 61, no. 15, pp. 1775-1777, Oct. 1992. (Pubitemid 23611092)
    • (1992) Applied Physics Letters , vol.61 , Issue.15 , pp. 1775-1777
    • Sugawara, H.1    Itaya, K.2    Nozaki, H.3    Hatakoshi, G.4
  • 6
    • 0004623209 scopus 로고    scopus 로고
    • Wide angle distributed Bragg reflectors for 590 nm amber AlGaInP light-emitting diodes
    • S. W. Chiou, C. P. Lee, C. K. Huang, and C. W. Chen, "Wide angle distributed Bragg reflectors for 590 nm amber AlGaInP light-emitting diodes," J. Appl. Phys., vol. 87, no. 4, pp. 2052-2054, 2000.
    • (2000) J. Appl. Phys. , vol.87 , Issue.4 , pp. 2052-2054
    • Chiou, S.W.1    Lee, C.P.2    Huang, C.K.3    Chen, C.W.4
  • 7
    • 0000890148 scopus 로고    scopus 로고
    • AlGaInP light-emitting diodes with mirror substrates fabricated by wafer bonding
    • R. H. Horng, D. S. Wuu, S. C. Wei, C. Y. Tseng, M. F. Huang, K. H. Chang, P. H. Liu, and K. C. Lin, "AlGaInP light-emitting diodes with mirror substrates fabricated by wafer bonding," Appl. Phys. Lett., vol. 75, no. 20, pp. 3054-3056, Nov. 1999. (Pubitemid 129567592)
    • (1999) Applied Physics Letters , vol.75 , Issue.20 , pp. 3054-3056
    • Horng, R.H.1    Wuu, D.S.2    Wei, S.C.3    Tseng, C.Y.4    Huang, M.F.5    Chang, K.H.6    Liu, P.H.7    Lin, K.C.8
  • 8
    • 1642329144 scopus 로고    scopus 로고
    • High-efficiency AlGaInP lightemitting diodes for solid-state lighting applications
    • Mar.
    • T. Gessmann and E. F. Schubert, "High-efficiency AlGaInP lightemitting diodes for solid-state lighting applications," J. Appl. Phys., vol. 95, no. 5, pp. 2203-2216, Mar. 2004.
    • (2004) J. Appl. Phys. , vol.95 , Issue.5 , pp. 2203-2216
    • Gessmann, T.1    Schubert, E.F.2
  • 9
    • 62549139719 scopus 로고    scopus 로고
    • Metal mirror assisting light extraction from patterned AlGaInP light-emitting diodes
    • Mar.
    • S.-K. Kim, H. D. Song, H.-S. Ee, H. M. Choi, H. K. Cho, Y.-H. Lee, and H.-G. Park, "Metal mirror assisting light extraction from patterned AlGaInP light-emitting diodes," Appl. Phys. Lett., vol. 94, no. 10, pp. 101102-1-101102-3, Mar. 2009.
    • (2009) Appl. Phys. Lett. , vol.94 , Issue.10 , pp. 1011021-1011023
    • Kim, S.-K.1    Song, H.D.2    Ee, H.-S.3    Choi, H.M.4    Cho, H.K.5    Lee, Y.-H.6    Park, H.-G.7
  • 14
    • 51149220122 scopus 로고
    • 30% external quantum efficiency from surface textured, thin-film lightemitting diodes
    • Oct.
    • I. Schnitzer, E. Yablonovitch, C. Caneau, T. J. Gmitter, and A. Scherer, "30% external quantum efficiency from surface textured, thin-film lightemitting diodes," Appl. Phys. Lett., vol. 63, no. 16, pp. 2174-2176, Oct. 1993.
    • (1993) Appl. Phys. Lett. , vol.63 , Issue.16 , pp. 2174-2176
    • Schnitzer, I.1    Yablonovitch, E.2    Caneau, C.3    Gmitter, T.J.4    Scherer, A.5
  • 16
    • 0038311836 scopus 로고    scopus 로고
    • Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface
    • Jun.
    • C. Huh, K. S. Lee, E.-J. Kang, and S.-J. Park, "Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface," J. Appl. Phys., vol. 93, no. 11, pp. 9383-9385, Jun. 2003.
    • (2003) J. Appl. Phys. , vol.93 , Issue.11 , pp. 9383-9385
    • Huh, C.1    Lee, K.S.2    Kang, E.-J.3    Park, S.-J.4
  • 19
    • 0035415827 scopus 로고    scopus 로고
    • Wafer bonding of 50-mm-diameter mirror substrates to AlGaInP light-emitting diode wafers
    • R. H. Horng, D. S. Wuu, C. H. Seieh, W. C. Peng, M. F. Huang, S. J. Tsai, and J. S. Liu, "Wafer bonding of 50-mm-diameter mirror substrates to A1GaInP light-emitting diode wafers," J. Electron. Mater., vol. 30, no. 8, pp. 907-910, Aug. 2001. (Pubitemid 32909281)
    • (2001) Journal of Electronic Materials , vol.30 , Issue.8 , pp. 907-910
    • Horng, R.H.1    Wuu, D.S.2    Seieh, C.H.3    Peng, W.C.4    Huang, M.F.5    Tsai, S.J.6    Liu, J.S.7
  • 20
    • 77949703305 scopus 로고    scopus 로고
    • On an AlGaInP multiple quantum well light emitting diode with a thin carbon-doped GaP contact layer structure
    • Feb.
    • T.-Y. Tsai, Y.-J. Liu, C.-H. Yen, and W.-C. Liu, "On an AlGaInP multiple quantum well light emitting diode with a thin carbon-doped GaP contact layer structure," J. Electrochem. Soc., vol. 157, no. 4, pp. H459-H462, Feb. 2010.
    • (2010) J. Electrochem. Soc. , vol.157 , Issue.4
    • Tsai, T.-Y.1    Liu, Y.-J.2    Yen, C.-H.3    Liu, W.-C.4
  • 21
    • 77949700561 scopus 로고    scopus 로고
    • Output power of AlGaInP light emitting diode improved by double roughening AlGaInP surfaces
    • Mar.
    • P.-W. Huang and Y. S. Wu, "Output power of AlGaInP light emitting diode improved by double roughening AlGaInP surfaces," Electrochem. Solid-State Lett., vol. 13, no. 5, pp. H163-H165, Mar. 2010.
    • (2010) Electrochem. Solid-State Lett. , vol.13 , Issue.5
    • Huang, P.-W.1    Wu, Y.S.2
  • 24
    • 30744452232 scopus 로고    scopus 로고
    • High brightness AlGaInP-based light emitting diodes by adopting the stripe-patterned omni-directional reflector
    • DOI 10.1088/0268-1242/21/2/016, PII S0268124206104563
    • Y. J. Lee, T. C. Lu, H. C. Kuo, S. C. Wang, M. J. Liou, C. W. Chang, T. C. Hsu, M. H. Hsieh, M. J. Jou, and B. J. Lee, "High brightness AlGaInP-based light emitting diodes by adopting the stripe-patterned omni-directional reflector," Semicond. Sci. Technol., vol. 21, no. 2, pp. 184-189, 2006. (Pubitemid 43099593)
    • (2006) Semiconductor Science and Technology , vol.21 , Issue.2 , pp. 184-189
    • Lee, Y.J.1    Lu, T.C.2    Kuo, H.C.3    Wang, S.C.4    Liou, M.J.5    Chang, C.W.6    Hsu, T.C.7    Hsieh, M.H.8    Jou, M.J.9    Lee, B.J.10
  • 26
    • 34249307502 scopus 로고    scopus 로고
    • ELiXIR - Solid-state luminaire with enhanced light extraction by internal reflection
    • DOI 10.1109/JDT.2007.895358
    • S. C. Allen and A. J. Steckl, "ELiXIR-solid-state luminaire with enhanced light extraction by internal reflection," J. Display Technol., vol. 3, no. 2, pp. 155-159, Jun. 2007. (Pubitemid 46808671)
    • (2007) IEEE/OSA Journal of Display Technology , vol.3 , Issue.2 , pp. 155-159
    • Allen, S.C.1    Steckl, A.J.2
  • 27
    • 39549083702 scopus 로고    scopus 로고
    • Luminance enhancement of flip-chip light-emitting diodes by geometric sapphire shaping structure
    • DOI 10.1109/LPT.2007.912990
    • C. E. Lee, H. C. Kuo, Y. C. Lee, M. R. Tsai, T. C. Lu, S. C. Wang, and C. T. Kuo, "Luminance enhancement of flip-chip light-emitting diodes by geometric sapphire shaping structure," IEEE Photon. Technol. Lett., vol. 20, no. 3, pp. 184-186, Feb. 2008. (Pubitemid 351279206)
    • (2008) IEEE Photonics Technology Letters , vol.20 , Issue.3 , pp. 184-186
    • Lee, C.E.1    Kuo, H.C.2    Lee, Y.C.3    Tsai, M.R.4    Lu, T.C.5    Wang, S.C.6    Kuo, C.T.7
  • 28
    • 73849120717 scopus 로고    scopus 로고
    • Light extraction analysis of AlGaInP based LED with surface texture
    • Nov.
    • Y. Qin, X. Guo, W. J. Jiang, R. Fang, and G. D. Shen, "Light extraction analysis of AlGaInP based LED with surface texture," Proc. SPIE, vol. 7635, pp. 763505-1-025015-7, Nov. 2009.
    • (2009) Proc. SPIE , vol.7635 , pp. 7635051-0250157
    • Qin, Y.1    Guo, X.2    Jiang, W.J.3    Fang, R.4    Shen, G.D.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.