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Volumn 157, Issue 4, 2010, Pages

On an AlGaInP multiple quantum well light emitting diode with a thin carbon-doped GaP contact layer structure

Author keywords

[No Author keywords available]

Indexed keywords

AGING TESTS; ALGAINP; C-DOPED; CONTACT LAYERS; CONTACT PROPERTIES; DYNAMIC RESISTANCE; EXTERNAL QUANTUM EFFICIENCY; GAP CONTACT LAYER; INDIUM TIN OXIDE FILMS; LIGHT OUTPUT POWER; MULTIPLE QUANTUM WELLS; OPTICAL ABSORPTION; OPTICAL DEGRADATION; OUTPUT POWER; WAVELENGTH SHIFT;

EID: 77949703305     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3314338     Document Type: Article
Times cited : (9)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.