High brightness AlGaInP-based light emitting diodes by adopting the stripe-patterned omni-directional reflector

Semiconductor Science and Technology

Volumn 21, Issue 2, 2006, Pages 184-189

  Lee, Y J ^a,b   Lu, T C ^a   Kuo, H C ^a   Wang, S C ^a   Liou, M J ^b   Chang, C W ^b   Hsu, T C ^b   Hsieh, M H ^b   Jou, M J ^b   Lee, B J ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b EPISTAR CORPORATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESIVES; ARRAYS; BONDING; DIFFRACTION; ELECTRIC POTENTIAL; LIGHT ABSORPTION; MONTE CARLO METHODS; OPTICAL MATERIALS;

ADHESIVE-LAYER BONDING; LIGHT EXTRACTION EFFICIENCY; OMNI-DIRECTIONAL REFLECTOR; STRIPE-PATTERNED ARRAY;

LIGHT EMITTING DIODES;

EID: 30744452232     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/2/016     Document Type: Article

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