Design and optimization of dielectric optical coatings for GaN based high bright LEDs

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6841, Issue , 2008, Pages

  Wang, Xiaodong ^a,b   Li, Yan ^a   Yang, Hua ^b   Yi, Xiaoyan ^b   Wang, Liangehen ^b   Wang, Guohong ^b   Yang, Fuhua ^b   Li, Jinmin ^b  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Dielectric Optical Coating; Extraction Efficiency; GaN LEDs

Indexed keywords

COATINGS; CORUNDUM; DESIGN; ELECTRODES; EXTRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHTING; METAL RECOVERY; OPTICAL COATINGS; OPTICAL MATERIALS; REFLECTION; RENEWABLE ENERGY RESOURCES; SEMICONDUCTING GALLIUM; SILICON COMPOUNDS; SILVER; SOLAR ENERGY; SOLAR RADIATION; TANTALUM;

AR COATINGS; DESIGN AND OPTIMIZATIONS; DIELECTRIC OPTICAL COATING; DIELECTRIC OPTICAL COATINGS; DIRECTIONAL REFLECTIONS; EXTRACTION EFFICIENCIES; GAN LEDS; METALLIC REFLECTORS; REFLECTION COATINGS; SAPPHIRE SURFACES; TRANSPARENT ELECTRODES; TRANSPARENT MATERIALS;

DIELECTRIC MATERIALS;

EID: 47949086232     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.765228     Document Type: Conference Paper

References (6)

1. Emil Stefanov, B.S. Shelton, H.S. Venugopalan, T. Zhang, I. Eliashevich, "Optimizing the external light extraction of nitride LEDs", Solid State Lighting II, Proceedings of SPIE, Vol.4776, 223 (2002).
2. Libin Wang, Research on GaN-based high power light emitting diodes, Dr's thesis, Institute of Semiconductors, Chinese Academy of Sciences, 2007.
3. D. Fuhrmann, C. Netzel, U. Rossow, et al., "Optimization scheme for the quantum efficiency of GalnN-based green-light-emitting diodes", Appl.Phys.Lett.88, 071105 (2006).
4. Seong-Jin Kim, "Improvement of GaN-Based light -emitting diode by ITO transparent electrode and vertical electrode", IEEE Photonics Technology Letters 17(8), 1617 (2005)
5. A fabrication method of GaN LED using a combined optical coatings, Chinese patent application number: 200710119473.3
6. Transparent P, N electrodes and their fabrication method, Chinese patent application number: 200710065320.5