SCOPUS 정보 검색 플랫폼

Journal of Electronic Materials

Volumn 30, Issue 8, 2001, Pages 907-910

Wafer bonding of 50-mm-diameter mirror substrates to AlGaInP light-emitting diode wafers

(7) Horng, R H a Wuu, D S b Seieh, C H b,c Peng, W C b Huang, M F c Tsai, S J c Liu, J S c

a NATIONAL CHUNG HSING UNIVERSITY (Taiwan)

b DA YEH UNIVERSITY (Taiwan)

c Visual Photonics Epitaxy Co Ltd (Taiwan)

Author keywords

AlGaInP; Light emitting diode (LED); Mirror substrates; Wafer bonding

Indexed keywords

ALUMINUM ALLOYS; EFFICIENCY; GALLIUM ALLOYS; GOLD ALLOYS; III-V SEMICONDUCTORS; INDIUM ALLOYS; MIRRORS; SEMICONDUCTOR ALLOYS; SILICON WAFERS; SUBSTRATES; WAFER BONDING; BONDING; LIGHT EMITTING DIODES; LIGHT REFLECTION; STRESSES; THIN FILMS;

FORWARD VOLTAGE; HIGH REFLECTIVITY; LIGHT-EMITTING DIODE; LIGHTEMITTING DIODE; LUMINOUS INTENSITY; METALLIC MIRRORS; MIRROR SUBSTRATE; OPERATING VOLTAGE; TEST DATA; WATER BONDING;

LIGHT EMITTING DIODES; SEMICONDUCTING SILICON;

WAFER BONDING;

EID: 0035415827 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (14)

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