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Effects of electron effective mass on the multiquantum barrier structure in AlGaInP laser diodes
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S.J. Chang, Y.K. Su, J.F. Chen, L.F. Wen, and B.R. Huang, "Effects of electron effective mass on the multiquantum barrier structure in AlGaInP laser diodes," Proc. Inst. Elect. Eng.-Optoelectron., vol. 148, no. 2, pp. 117-120, Apr. 2001.
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Electrical derivative characteristics of ion implanted AlGaInP/GaInP multi-quantum well lasers
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J.K. Sheu, Y.K. Su, S.J. Chang, G.C. Chi, F.B. Lin, C.C. Liu, and C.C. Chiu, "Electrical derivative characteristics of ion implanted AlGaInP/GaInP multi-quantum well lasers," Solid State Electron., vol. 42, no. 10, pp. 1867-1869, Oct. 1998.
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Y.Z. Juang, Y.K. Su, S.J. Chang, D.F. Huang, and C.S. Chang, "Reactive ion etching for AlGaInP/GaInP laser structure," J. Vac. Sci. Technol., vol. A16, no. 4, pp. 2031-2036, July/Aug. 1998.
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S.J. Chang, C.S. Chang, Y.K. Su, P.T. Chang, Y.R. Wu, K.H. Huang, and T.P. Chen, "Chirped GaAs/AlAs distributed Bragg reflectors for high brightness yellow-green light-emitting diodes," IEEE Photon. Technol. Lett., vol. 9, pp. 182-184, Feb. 1997.
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F.A. Kish, D.A. Vanderwater, D.C. DeFevere, D.A. Steigerwald, G.E. Hofler, K.G. Park, and F.M. Steranka, "Highly reliable and efficient semiconductor wafer-bonded AlGaInP/GaP light-emitting diodes," Electron. Lett., vol. 32, no. 2, pp. 132-134, Jan. 1996.
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S.J. Chang, J.K. Sheu, Y.K. Su, M.J. Jou, and G.C. Chi, "AlGaInP/GaP light emitting diodes fabricated by direct bonding technology," Jpn. J. Appl. Phys., vol. 35, no. 8, pp. 4199-4202, Aug. 1996.
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R.H. Horng, D.S. Wuu, S.C. Wei, C.Y. Tseng, M.F. Huang, K.H. Chang, P.H. Liu, and K.C. Lin, "AlGaInP light-emitting diodes with mirror substrates fabricated by wafer bonding," Appl. Phys. Lett., vol. 75, no. 20, pp. 3054-3056, Nov. 1999.
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11
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AlGaInP compressively strained multi-quantum well light-emitting diodes for polymer fiber applications
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S.J. Chang and C.S. Chang, "AlGaInP compressively strained multi-quantum well light-emitting diodes for polymer fiber applications," IEEE Photon. Technol. Lett., vol. 10, pp. 772-774, June 1998.
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Apr.
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Y.K. Su, W.L. Li, S.J. Chang, C.S. Chang, and C.Y. Tsai, "High performance 670nm AlGaInP/GaInP visible strained quantum well lasers," IEEE Trans. Electron. Dev., vol. 45, pp. 763-767, Apr. 1998.
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0031630734
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Design of AlGaInP visible lasers with a low vertical divergence angle
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Jan.
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W.L. Li, Y.K. Su, S.J. Chang, C.S. Chang, and C.Y. Tsai, "Design of AlGaInP visible lasers with a low vertical divergence angle," Solid-State Electron., vol. 42, no. 1, pp. 87-90, Jan. 1998.
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16
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0031647336
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High brightness AlGaInP 573 nm light-emitting diode with a chirped multi-quantum barrier
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Jan.
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C.S. Chang, Y.K. Su, S.J. Chang, P.T. Chang, Y.R. Wu, K.H. Huang, and T.P. Chen, "High brightness AlGaInP 573nm light-emitting diode with a chirped multi-quantum barrier," IEEE J. Quantum Electon., vol. 34, pp. 77-83, Jan. 1998.
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S.J. Chang, C.S. Chang, Y.K. Su, P.T. Chang, Y.R. Wu, K.H. Huang, and T.P. Chen, "AlGaInP multi-quantum well light-emitting diodes," Proc. Inst. Elect. Eng.-Optoelectron., vol. 144, no. 6, pp. 405-409, Nov. 1997.
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0031250162
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A novel waveguide structure to reduce beam dispersion and threshold current in GaInP/AlGaInP visible quantum well lasers
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Oct.
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W.L. Li, Y.K. Su, S.J. Chang, and C.Y. Tsai, "A novel waveguide structure to reduce beam dispersion and threshold current in GaInP/AlGaInP visible quantum well lasers," Appl. Phys. Lett., vol. 71, no. 16, pp. 2245-2247, Oct. 1997.
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Sept.
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S.J. Chang, C.S. Chang, Y.K. Su, P.T. Chang, Y.R. Wu, K.H. Huang, and T.P. Chen, "AlGaInP yellow-green light-emitting diodes with a tensile strain barrier cladding layer," IEEE Photon. Technol. Lett., vol. 9, pp. 1199-1201, Sept. 1997.
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Chirped GaAs/AlAs distributed Bragg reflectors for high brightness yellow-green light-emitting diodes
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Feb.
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S.J. Chang, C.S. Chang, Y.K. Su, P.T. Chang, Y.R. Wu, K.H. Huang, and T.P. Chen, "Chirped GaAs/AlAs distributed Bragg reflectors for high brightness yellow-green light-emitting diodes," IEEE Photon. Technol. Lett., vol. 9, pp. 182-184, Feb. 1997.
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