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Volumn 38, Issue 10, 2002, Pages 1390-1394

AlGaInp - Sapphire glue bonded light-emitting diodes

Author keywords

AlGsInP; Glue bonding; LED; MOCVD; MQW

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ENERGY GAP; LIGHT EMITTING DIODES; LIGHT REFLECTION; SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0036794459     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2002.802970     Document Type: Article
Times cited : (14)

References (20)
  • 1
    • 0035303363 scopus 로고    scopus 로고
    • Effects of electron effective mass on the multiquantum barrier structure in AlGaInP laser diodes
    • Apr.
    • S.J. Chang, Y.K. Su, J.F. Chen, L.F. Wen, and B.R. Huang, "Effects of electron effective mass on the multiquantum barrier structure in AlGaInP laser diodes," Proc. Inst. Elect. Eng.-Optoelectron., vol. 148, no. 2, pp. 117-120, Apr. 2001.
    • (2001) Proc. Inst. Elect. Eng.-Optoelectron. , vol.148 , Issue.2 , pp. 117-120
    • Chang, S.J.1    Su, Y.K.2    Chen, J.F.3    Wen, L.F.4    Huang, B.R.5
  • 2
    • 0032184367 scopus 로고    scopus 로고
    • Electrical derivative characteristics of ion implanted AlGaInP/GaInP multi-quantum well lasers
    • Oct.
    • J.K. Sheu, Y.K. Su, S.J. Chang, G.C. Chi, F.B. Lin, C.C. Liu, and C.C. Chiu, "Electrical derivative characteristics of ion implanted AlGaInP/GaInP multi-quantum well lasers," Solid State Electron., vol. 42, no. 10, pp. 1867-1869, Oct. 1998.
    • (1998) Solid State Electron. , vol.42 , Issue.10 , pp. 1867-1869
    • Sheu, J.K.1    Su, Y.K.2    Chang, S.J.3    Chi, G.C.4    Lin, F.B.5    Liu, C.C.6    Chiu, C.C.7
  • 3
    • 0032346634 scopus 로고    scopus 로고
    • Reactive ion etching for AlGaInP/GaInP laser structure
    • July/Aug.
    • Y.Z. Juang, Y.K. Su, S.J. Chang, D.F. Huang, and C.S. Chang, "Reactive ion etching for AlGaInP/GaInP laser structure," J. Vac. Sci. Technol., vol. A16, no. 4, pp. 2031-2036, July/Aug. 1998.
    • (1998) J. Vac. Sci. Technol. , vol.A16 , Issue.4 , pp. 2031-2036
    • Juang, Y.Z.1    Su, Y.K.2    Chang, S.J.3    Huang, D.F.4    Chang, C.S.5
  • 4
    • 0028546391 scopus 로고
    • Hybrid-type InGaAlP/GaAs distributed Bragg reflectors for InGaAlP light-emitting diodes
    • Nov.
    • H. Sugawara, K. Itaya, and G. Hatakoshi, "Hybrid-type InGaAlP/GaAs distributed Bragg reflectors for InGaAlP light-emitting diodes," Jpn. J. Appl. Phys., vol. 33, no. 11, pp. 6195-6198, Nov. 1994.
    • (1994) Jpn. J. Appl. Phys. , vol.33 , Issue.11 , pp. 6195-6198
    • Sugawara, H.1    Itaya, K.2    Hatakoshi, G.3
  • 5
    • 0031078142 scopus 로고    scopus 로고
    • Chirped GaAs/AlAs distributed Bragg reflectors for high brightness yellow-green light-emitting diodes
    • Feb.
    • S.J. Chang, C.S. Chang, Y.K. Su, P.T. Chang, Y.R. Wu, K.H. Huang, and T.P. Chen, "Chirped GaAs/AlAs distributed Bragg reflectors for high brightness yellow-green light-emitting diodes," IEEE Photon. Technol. Lett., vol. 9, pp. 182-184, Feb. 1997.
    • (1997) IEEE Photon. Technol. Lett. , vol.9 , pp. 182-184
    • Chang, S.J.1    Chang, C.S.2    Su, Y.K.3    Chang, P.T.4    Wu, Y.R.5    Huang, K.H.6    Chen, T.P.7
  • 9
    • 0030205572 scopus 로고    scopus 로고
    • AlGaInP/GaP light emitting diodes fabricated by direct bonding technology
    • Aug.
    • S.J. Chang, J.K. Sheu, Y.K. Su, M.J. Jou, and G.C. Chi, "AlGaInP/GaP light emitting diodes fabricated by direct bonding technology," Jpn. J. Appl. Phys., vol. 35, no. 8, pp. 4199-4202, Aug. 1996.
    • (1996) Jpn. J. Appl. Phys. , vol.35 , Issue.8 , pp. 4199-4202
    • Chang, S.J.1    Sheu, J.K.2    Su, Y.K.3    Jou, M.J.4    Chi, G.C.5
  • 10
  • 11
    • 0032098531 scopus 로고    scopus 로고
    • AlGaInP compressively strained multi-quantum well light-emitting diodes for polymer fiber applications
    • June
    • S.J. Chang and C.S. Chang, "AlGaInP compressively strained multi-quantum well light-emitting diodes for polymer fiber applications," IEEE Photon. Technol. Lett., vol. 10, pp. 772-774, June 1998.
    • (1998) IEEE Photon. Technol. Lett. , vol.10 , pp. 772-774
    • Chang, S.J.1    Chang, C.S.2
  • 12
    • 0032093810 scopus 로고    scopus 로고
    • 650 nm AlGaInP/GaInP compressively strained multi-quantum well light-emitting diodes
    • June
    • _, "650nm AlGaInP/GaInP compressively strained multi-quantum well light-emitting diodes," Jpn. J. App. Phys. Lett., vol. 37, no. 6A, pp. L653-L655, June 1998.
    • (1998) Jpn. J. App. Phys. Lett. , vol.37 , Issue.6 A
  • 13
    • 0032074631 scopus 로고    scopus 로고
    • 642 nm AlGaInP laser diodes with a tensile strain barrier cladding layer
    • May
    • _, "642 nm AlGaInP laser diodes with a tensile strain barrier cladding layer," IEEE Photon. Technol. Lett., vol. 10, pp. 651-653, May 1998.
    • (1998) IEEE Photon. Technol. Lett. , vol.10 , pp. 651-653
  • 14
    • 0000179232 scopus 로고    scopus 로고
    • High performance 670 nm AlGaInP/GaInP visible strained quantum well lasers
    • Apr.
    • Y.K. Su, W.L. Li, S.J. Chang, C.S. Chang, and C.Y. Tsai, "High performance 670nm AlGaInP/GaInP visible strained quantum well lasers," IEEE Trans. Electron. Dev., vol. 45, pp. 763-767, Apr. 1998.
    • (1998) IEEE Trans. Electron. Dev. , vol.45 , pp. 763-767
    • Su, Y.K.1    Li, W.L.2    Chang, S.J.3    Chang, C.S.4    Tsai, C.Y.5
  • 15
    • 0031630734 scopus 로고    scopus 로고
    • Design of AlGaInP visible lasers with a low vertical divergence angle
    • Jan.
    • W.L. Li, Y.K. Su, S.J. Chang, C.S. Chang, and C.Y. Tsai, "Design of AlGaInP visible lasers with a low vertical divergence angle," Solid-State Electron., vol. 42, no. 1, pp. 87-90, Jan. 1998.
    • (1998) Solid-State Electron. , vol.42 , Issue.1 , pp. 87-90
    • Li, W.L.1    Su, Y.K.2    Chang, S.J.3    Chang, C.S.4    Tsai, C.Y.5
  • 18
    • 0031250162 scopus 로고    scopus 로고
    • A novel waveguide structure to reduce beam dispersion and threshold current in GaInP/AlGaInP visible quantum well lasers
    • Oct.
    • W.L. Li, Y.K. Su, S.J. Chang, and C.Y. Tsai, "A novel waveguide structure to reduce beam dispersion and threshold current in GaInP/AlGaInP visible quantum well lasers," Appl. Phys. Lett., vol. 71, no. 16, pp. 2245-2247, Oct. 1997.
    • (1997) Appl. Phys. Lett. , vol.71 , Issue.16 , pp. 2245-2247
    • Li, W.L.1    Su, Y.K.2    Chang, S.J.3    Tsai, C.Y.4
  • 20
    • 0031078142 scopus 로고    scopus 로고
    • Chirped GaAs/AlAs distributed Bragg reflectors for high brightness yellow-green light-emitting diodes
    • Feb.
    • S.J. Chang, C.S. Chang, Y.K. Su, P.T. Chang, Y.R. Wu, K.H. Huang, and T.P. Chen, "Chirped GaAs/AlAs distributed Bragg reflectors for high brightness yellow-green light-emitting diodes," IEEE Photon. Technol. Lett., vol. 9, pp. 182-184, Feb. 1997.
    • (1997) IEEE Photon. Technol. Lett. , vol.9 , pp. 182-184
    • Chang, S.J.1    Chang, C.S.2    Su, Y.K.3    Chang, P.T.4    Wu, Y.R.5    Huang, K.H.6    Chen, T.P.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.