W-band GaN MMIC with 842 mW output power at 88 GHz

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2010, Pages 237-239

  Micovic, M ^a   Kurdoghlian, A ^a   Shinohara, K ^a   Burnham, S ^a   Milosavljevic, I ^a   Hu, M ^a   Corrion, A ^a   Fung, A ^b   Lin, R ^b   Samoska, L ^b   Kangaslahti, P ^b   Lambrigtsen, B ^b   Goldsmith, P ^b   Wong, W S ^a   Schmitz, A ^a   Hashimoto, P ^a   Willadsen, P J ^a   Chow, D H ^a  

^a Hughes Aircraft Co   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

GaN; Millimeter wave; MMIC; Power amplifiers; Solid state power amplifiers; W band

Indexed keywords

CONTINUOUS-WAVE OPERATIONS; DRAIN BIAS; GAN; INP HEMT; MMIC; MMIC CHIPS; MW OUTPUT; OUTPUT POWER; OUTPUT STAGES; POWER GAINS; POWER MODULE; SOLID STATE POWER AMPLIFIERS; SOLID STATE TECHNOLOGY; THREE STAGES; W-BAND;

FREQUENCY BANDS; GALLIUM NITRIDE; MILLIMETER WAVE DEVICES; MILLIMETER WAVES; POWER AMPLIFIERS; SOLID STATE DEVICE STRUCTURES;

GALLIUM ALLOYS;

EID: 77957779227     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2010.5516911     Document Type: Conference Paper

References (7)

1. Y. C. Chen, D. L. Ingram, R. Lai, M. Barsky, R. Grunbacher, T. Block, H. C. Yen" and D. C. Streit, "A 427 mW, 20% compact W-band InP HEMT MMIC power amplifier, " IEEE Microwave and Guided Wave Letters Vol. 8, pp 399 - 401, 1998 .
2. M. Micovic, A. Kurdoghlian, P. Hashimoto, M. Hu, M. Anteliffe, P. J. Willadsen, W. S. Wong, R. Bowen, I. Milosavljevic, A. Schmitz, M. Wetzel, D. H. Chow "GaN HFET for W-band Power Applications", IEEE Int. Electron Device Meeting. Dig., December 2006.
3. M. Micovic, A. Kurdoghlian, H. P. Moyer, P. Hashimoto, M. Hu, M. Anteliffe, P. J. Willadsen, W. S. Wong, R. Bowen, I. Milosavljevic, Y. Yoon, A. Schmitz, M. Wetzel, C. McGuire, B. Hughes, D. H. Chow, "GaN MMIC PAs for E-Band (71 GHz- 95 GHz) Radio", 2008 IEEE CSIC Symposium, pp 1-4, October 2008.
4. M. Micovic A. Kurdoghlian, T. Lee, R. O. Hiramoto, P. Hashimoto, A. Schmitz, I. Milosavljevic, P. J. Willadsen, W.-S. Wong, M. Anteliffe, M. Wetzel, M. Hu, M. J. Delaney3, D. H. Chow "Robust Broadband (4 GHz - 16 GHz) GaN MMIC LNA", 2007 IEEE CSIC Symposium, pp 237 - 240, October 2007.
5. K Shinohara, I. Milosavljevic, S. Burnham, A. Corrion, P. Hashimoto, D. Wong, M. Hu, C. Butler, A. Schmitz, KS. Boutros, H. Kazemi, P. J. Willadsen and M. Micovic, "60-nm GaN/AIGaN DH-HEMTs with J.0 Ω-mm Ron, 2. 0 Nmm Idmax, and 153 GHz fT", IEEE Device Research Conference Dig., June 2009.
6. M. Micovic, P. Hashimoto, M. Hu, I. Milosavljevic, J. Duvall, P. J. Willadsen, W.-S. Wong, A. M. Conway, A. Kurdoghlian, P. W. Deelman, J.-S. Moon, A. Schmitz, and M. J. Delaney, "GaN Double Heterojunction Field Effect Transistor for Microwave and Millimeterwave Power Applications", 2004 IEEE Int. Electron Device Meeting. Dig., pp. 807-810, December 2004.
7. M.J. Uren,. K.J. Nash, R.S. Balmer, T. Martin, E. Morvan, N. Caillas, S.L. Delage, D. Ducatteau, B. Grimbert, J. C. De Jaeger, "Punch-Through in Short-Channel AIGaN/GaN HFETs", IEEE Trans. El. Dev., vol.53, pp. 395-398, February 2006.