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Applied Surface Science

Volumn 257, Issue 14, 2011, Pages 6073-6078

Structure and optoelectronic properties of multi-element oxide thin film

(5) Yu, Ruei Sung a Huang, Chueh Jung b Huang, Rong Hsin c Sun, Chung Hsing c Shieu, Fuh Sheng c

a ASIA UNIVERSITY (Taiwan)

b HSIUPING INSTITUTE OF TECHNOLOGY (Taiwan)

c NATIONAL CHUNG HSING UNIVERSITY (Taiwan)

Author keywords

Multi element oxide; Optoelectronic properties; Semiconductor; Structure; Transparent conducting oxide

Indexed keywords

AMORPHOUS FILMS; BINDING ENERGY; COPPER ALLOYS; ENERGY GAP; NIOBIUM ALLOYS; OXIDE SEMICONDUCTORS; OXYGEN; PHASE STRUCTURE; SEMICONDUCTOR MATERIALS; STRUCTURE (COMPOSITION); THIN FILMS; TIN ALLOYS; TITANIUM ALLOYS; TRANSPARENT CONDUCTING OXIDES; ZINC ALLOYS;

ELECTRON BINDING ENERGY; INDIRECT BAND GAP; MULTI-ELEMENT; MULTI-PHASE STRUCTURES; OPTOELECTRONIC PROPERTIES; OXIDE THIN FILMS; OXYGEN CONTENT; VALENCE ELECTRON;

STRUCTURAL PROPERTIES;

EID: 79953024050 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2011.01.139 Document Type: Article

Times cited : (20)

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