Quantum engineering of nanoelectronic devices: The role of quantum confinement on mobility degradation

Microelectronics Journal

Volumn 32, Issue 8, 2001, Pages 679-686

  Fairus, A T M ^a,b,c   Arora, V K ^a,b,c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

^c WILKES UNIVERSITY   (United States)

Author keywords

Mobility degradation; MOSFET; Nanoelectronic devices; Quantum confinement; Quantum well; Saturation velocity

Indexed keywords

CARRIER MOBILITY; INTERFACES (MATERIALS); LEAKAGE CURRENTS; NANOSTRUCTURED MATERIALS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR QUANTUM WELLS; TRANSPORT PROPERTIES;

NANOELECTRONIC DEVICES; QUANTUM CONFINEMENT;

MOSFET DEVICES;

EID: 0035426935     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(00)00151-8     Document Type: Article

References (9)