메뉴 건너뛰기




Volumn 8, Issue 1, 2008, Pages 147-151

Correlated random telegraph signal and low-frequency noise in carbon nanotube transistors

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBE TRANSISTOR; LOW FREQUENCY NOISE; TELEGRAPH SIGNALS;

EID: 38749115755     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl0722774     Document Type: Article
Times cited : (31)

References (24)
  • 1
    • 38749137914 scopus 로고    scopus 로고
    • 2005 International Technology Roadmap for Semiconductors (ITRS).
    • 2005 International Technology Roadmap for Semiconductors (ITRS).
  • 13
    • 38749103309 scopus 로고    scopus 로고
    • Sharp spikes are present due to the third defect E. We ignore the effect due to defect E, due to its little contribution to the RTS statistics
    • Sharp spikes are present due to the third defect E. We ignore the effect due to defect E, due to its little contribution to the RTS statistics.
  • 18
    • 38749114815 scopus 로고    scopus 로고
    • If a defect is located inside the oxide, the effective interaction area to channel carriers could be smaller than the circle area. The equivalent effective interaction area in this case could be easily achieved
    • If a defect is located inside the oxide, the effective interaction area to channel carriers could be smaller than the circle area. The equivalent effective interaction area in this case could be easily achieved.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.