-
1
-
-
38749137914
-
-
2005 International Technology Roadmap for Semiconductors (ITRS).
-
2005 International Technology Roadmap for Semiconductors (ITRS).
-
-
-
-
5
-
-
33749009750
-
-
Liu, F.; Wang, K. L.; Li, C.; Zhou, C. IEEE Trans. Nanotechnol. 2006, 5, 441.
-
(2006)
IEEE Trans. Nanotechnol
, vol.5
, pp. 441
-
-
Liu, F.1
Wang, K.L.2
Li, C.3
Zhou, C.4
-
8
-
-
20844438330
-
-
Liu, F.; Bao, M.; Kim, H. J.; Wang, K. L.; Liu, X.; Li, C.; Zhou, C. Appl. Phys. Lett. 2005, 86, 163102.
-
(2005)
Appl. Phys. Lett
, vol.86
, pp. 163102
-
-
Liu, F.1
Bao, M.2
Kim, H.J.3
Wang, K.L.4
Liu, X.5
Li, C.6
Zhou, C.7
-
9
-
-
0032578904
-
-
Kong, J.; Soh, H. T.; Cassell, A. M.; Quate, C. F.; Dai, H. J. Nature 1998, 395, 878.
-
(1998)
Nature
, vol.395
, pp. 878
-
-
Kong, J.1
Soh, H.T.2
Cassell, A.M.3
Quate, C.F.4
Dai, H.J.5
-
10
-
-
0038823628
-
-
Lu, W.; Ji, Z.; Pfeiffer, L.; West, K. W.; Rimberg, A. J. Nature 2003, 423, 422.
-
(2003)
Nature
, vol.423
, pp. 422
-
-
Lu, W.1
Ji, Z.2
Pfeiffer, L.3
West, K.W.4
Rimberg, A.J.5
-
11
-
-
33644545730
-
-
Gustavsson, S.; Leturcq, R.; Simoviè, B.; Schleser, R.; Ihn, T.; Studerus, P.; Ensslin. Phys. Rev. Lett. 2006, 96, 076605.
-
(2006)
Phys. Rev. Lett
, vol.96
, pp. 076605
-
-
Gustavsson, S.1
Leturcq, R.2
Simoviè, B.3
Schleser, R.4
Ihn, T.5
Studerus, P.6
Ensslin7
-
13
-
-
38749103309
-
-
Sharp spikes are present due to the third defect E. We ignore the effect due to defect E, due to its little contribution to the RTS statistics
-
Sharp spikes are present due to the third defect E. We ignore the effect due to defect E, due to its little contribution to the RTS statistics.
-
-
-
-
17
-
-
0001702446
-
-
Kirton, M. J.; Uren, M. J.; Collins, S.; Schulz, M.; Karmann, A.; Scheffer, K. Semicond. Sci. Technol. 1989, 4, 1116.
-
(1989)
Semicond. Sci. Technol
, vol.4
, pp. 1116
-
-
Kirton, M.J.1
Uren, M.J.2
Collins, S.3
Schulz, M.4
Karmann, A.5
Scheffer, K.6
-
18
-
-
38749114815
-
-
If a defect is located inside the oxide, the effective interaction area to channel carriers could be smaller than the circle area. The equivalent effective interaction area in this case could be easily achieved
-
If a defect is located inside the oxide, the effective interaction area to channel carriers could be smaller than the circle area. The equivalent effective interaction area in this case could be easily achieved.
-
-
-
-
19
-
-
35949025938
-
-
Ralls, K. R.; Skocpol, W. J.; Jackel, L. D.; Howard, R. E.; Fetter, L. A.; Epworth, R. W.; Tennant, D. M. Phys. Rev. Lett. 1984, 52, 228.
-
(1984)
Phys. Rev. Lett
, vol.52
, pp. 228
-
-
Ralls, K.R.1
Skocpol, W.J.2
Jackel, L.D.3
Howard, R.E.4
Fetter, L.A.5
Epworth, R.W.6
Tennant, D.M.7
-
24
-
-
33746626789
-
-
Liu, F.; Bao, M.; Wang, K. L.; Zhang, D.; Zhou, C. Phys Rev. B 2006, 74, 035438.
-
(2006)
Phys Rev. B
, vol.74
, pp. 035438
-
-
Liu, F.1
Bao, M.2
Wang, K.L.3
Zhang, D.4
Zhou, C.5
|