Direct observation of single-charge-detection capability of nanowire field-effect transistors

Nature Nanotechnology

Volumn 5, Issue 10, 2010, Pages 737-741

  Salfi, J ^a   Savelyev, I G ^a   Blumin, M ^a   Nair, S V ^a   Ruda, H E ^a  

^a UNIVERSITY OF TORONTO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; BINDING ENERGY; COULOMB INTERACTIONS; ELECTRONS; GATES (TRANSISTOR); III-V SEMICONDUCTORS; INDIUM ARSENIDE; NANOWIRES; PERMITTIVITY;

CONDUCTING NANOWIRES; DIELECTRIC PERMITTIVITIES; ELECTROSTATIC POTENTIALS; INAS NANOWIRE FIELD-EFFECT TRANSISTORS; ONE-DIMENSIONAL NANOSTRUCTURE; PERFORMANCE CHEMICALS; SEMICONDUCTOR NANOWIRE; SINGLE ELECTRON MEMORY;

SINGLE ELECTRON TRANSISTORS;

NANOWIRE; QUANTUM DOT;

ARTICLE; ELECTRIC CONDUCTIVITY; ELECTRON; FIELD EFFECT TRANSISTOR; NANOELECTROMECHANICAL SYSTEM; PRIORITY JOURNAL; STATIC ELECTRICITY;

EID: 77957905874     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2010.180     Document Type: Article

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